S-93C46BD0I-T8T1G

Product Overview

Category

S-93C46BD0I-T8T1G belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, automotive systems, consumer electronics, and industrial applications.

Characteristics

• Non-volatile memory: The data stored in S-93C46BD0I-T8T1G remains intact even when power is disconnected.
• High endurance: This chip can withstand a large number of read and write cycles.
• Small form factor: The package size of S-93C46BD0I-T8T1G is compact, making it suitable for space-constrained designs.
• Low power consumption: It operates at low voltage levels, minimizing energy consumption.
• High reliability: S-93C46BD0I-T8T1G offers excellent data retention and endurance characteristics.

Package

S-93C46BD0I-T8T1G is available in a surface-mount 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of S-93C46BD0I-T8T1G lies in its ability to store and retrieve digital information reliably in a compact and low-power manner.

Packaging/Quantity

This product is typically supplied in reels or tubes, with a quantity of 2500 units per reel.

Specifications

• Memory capacity: 1 kilobit (128 bytes)
• Interface: Serial I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write cycle endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

S-93C46BD0I-T8T1G has the following pin configuration:

| Pin Name | Function | |----------|----------| | VCC | Power supply voltage | | GND | Ground | | SDA | Serial data input/output | | SCL | Serial clock input | | WP | Write protect (optional) |

Functional Features

• Byte-level read and write operations: S-93C46BD0I-T8T1G allows individual bytes to be read from or written to, providing flexibility in data manipulation.
• Sequential read mode: It supports sequential read operations, enabling efficient retrieval of consecutive memory locations.
• Hardware write protection: The optional write protect pin (WP) can be used to prevent accidental modification of stored data.

Advantages and Disadvantages

Advantages

• Compact size and low power consumption make it suitable for portable and battery-powered devices.
• High endurance ensures reliable data storage over an extended period.
• Compatibility with I2C interface simplifies integration into existing systems.
• Cost-effective solution for non-volatile memory requirements.

Disadvantages

• Limited memory capacity may not be sufficient for certain applications requiring larger storage.
• Slower write speed compared to other types of memory technologies.
• Vulnerable to electromagnetic interference due to its small form factor.

Working Principles

S-93C46BD0I-T8T1G utilizes EEPROM technology, which allows for electrically erasing and reprogramming of data. It stores information by trapping electrical charges within a floating gate structure. When data needs to be written, a high voltage is applied to the gate, allowing electrons to tunnel through a thin oxide layer. Reading data involves detecting the presence or absence of charge in specific memory cells.

Detailed Application Field Plans

S-93C46BD0I-T8T1G finds applications in various fields, including but not limited to: - Microcontroller-based systems - Automotive electronics (e.g., engine control units, infotainment systems) - Consumer electronics (e.g., smart appliances, wearable devices) - Industrial automation and control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to S-93C46BD0I-T8T1G include: - AT24C01A by Atmel - CAT24C01 by ON Semiconductor - M24C01-WMN6TP by STMicroelectronics - 24AA01 by Microchip Technology

These alternatives provide comparable memory capacity, interface compatibility, and package options.

In conclusion, S-93C46BD0I-T8T1G is a compact and reliable Serial EEPROM chip suitable for various electronic applications. Its high endurance, low power consumption, and byte-level access make it an ideal choice for non-volatile data storage needs.

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