AT45DB641E-MWHN2B-T

Product Overview

Category

AT45DB641E-MWHN2B-T belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile memory
• High-density storage capacity
• Fast read and write operations
• Low power consumption
• Wide operating voltage range

Package

The AT45DB641E-MWHN2B-T is available in a small form factor package, suitable for integration into compact electronic devices.

Essence

The essence of AT45DB641E-MWHN2B-T lies in its ability to provide reliable and efficient data storage solutions for a wide range of applications.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of several hundred units per package.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 10,000 erase/write cycles

Detailed Pin Configuration

The AT45DB641E-MWHN2B-T has a total of 28 pins, which are assigned specific functions as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. SI: Serial input
4. SO: Serial output
5. WP: Write protect
6. HOLD: Hold input
7. RESET: Reset input
8. SCK: Serial clock 9-16. A0-A7: Address inputs 17-24. NC: No connection 25-28. CE0-CE3: Chip enable inputs

Functional Features

• Dual-interface architecture (SPI and RapidS serial interface)
• Page program operation for efficient data storage
• Continuous read mode for fast data retrieval
• Sector erase capability for flexible memory management
• Software and hardware protection mechanisms for data security

Advantages and Disadvantages

Advantages

• High storage capacity in a compact form factor
• Fast read and write operations
• Low power consumption
• Wide operating voltage range allows compatibility with various systems
• Reliable data retention and endurance

Disadvantages

• Limited number of erase/write cycles compared to some other flash memory devices
• Higher cost compared to lower-capacity alternatives

Working Principles

The AT45DB641E-MWHN2B-T utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors, which can be electrically programmed and erased. The Serial Peripheral Interface (SPI) enables communication between the device and the host system, facilitating data transfer and control operations.

Detailed Application Field Plans

The AT45DB641E-MWHN2B-T is widely used in various electronic applications, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation units) - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. AT45DB321E-MWHN2B-T: 32 megabit (4 megabyte) capacity, similar features and specifications.
2. AT45DB1282D-MUHN2B-T: 128 megabit (16 megabyte) capacity, higher storage capacity option.
3. AT45DB642D-CNUHN2B-T: 64 megabit (8 megabyte) capacity, different package type (chip-scale package).

These alternative models offer different storage capacities and package options to cater to specific application requirements.

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