AS4C128M8D3LB-12BCNTR

Product Overview

Category

AS4C128M8D3LB-12BCNTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data access
• Non-volatile storage
• Large storage capacity
• Low power consumption

Package

AS4C128M8D3LB-12BCNTR is available in a compact and standardized package that ensures compatibility with different devices.

Essence

The essence of AS4C128M8D3LB-12BCNTR lies in its ability to store and retrieve data quickly and efficiently, making it an essential component for smooth operation of electronic devices.

Packaging/Quantity

AS4C128M8D3LB-12BCNTR is typically packaged in anti-static trays or tubes. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Model: AS4C128M8D3LB-12BCNTR
• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 128M x 8 bits
• Speed: 12 nanoseconds (NS)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Package Type: Lead-Bearing Ceramic Quad Flat Pack (LQFP)

Detailed Pin Configuration

AS4C128M8D3LB-12BCNTR has the following pin configuration:

1. VDD - Power supply voltage
2. VSS - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. WE - Write enable
6. CAS - Column address strobe
7. RAS - Row address strobe
8. OE - Output enable
9. CLK - Clock input

Functional Features

• High-speed data access: AS4C128M8D3LB-12BCNTR offers fast read and write operations, ensuring efficient data processing.
• Non-volatile storage: The memory retains data even when power is disconnected, providing reliable storage.
• Large storage capacity: With a capacity of 128 Megabits, it can store a significant amount of data.
• Low power consumption: AS4C128M8D3LB-12BCNTR operates at low voltage and consumes minimal power.

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Reliable non-volatile storage
• Ample storage capacity
• Low power consumption

Disadvantages

• Relatively higher cost compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

AS4C128M8D3LB-12BCNTR utilizes the principles of dynamic random-access memory (DRAM). It stores data in capacitors within an integrated circuit. To retain the stored data, the capacitors need to be periodically refreshed. When data is required, the memory controller sends appropriate signals to access the desired location and retrieve the data.

Detailed Application Field Plans

AS4C128M8D3LB-12BCNTR finds applications in various fields, including:

1. Computers and laptops
2. Servers and data centers
3. Networking equipment
4. Automotive electronics
5. Industrial automation systems
6. Medical devices
7. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C128M8D3LB-12BCNTR include:

1. AS4C256M16D3LB-12BCNTR
2. AS4C512M32D3LB-12BCNTR
3. AS4C1G64D3LB-12BCNTR

These models offer higher capacities and may have additional features depending on the specific requirements of the application.

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