AS4C8M16S-7TCNTR

Product Overview

Category

AS4C8M16S-7TCNTR belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Non-volatile memory
• Large storage capacity
• Low power consumption

Package

AS4C8M16S-7TCNTR is available in a compact and durable package, designed to protect the memory module from external factors such as moisture and physical damage.

Essence

The essence of AS4C8M16S-7TCNTR lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

AS4C8M16S-7TCNTR is typically packaged individually or in sets, depending on the manufacturer's specifications. The quantity may vary, but it is commonly available in single units or multiples of ten.

Specifications

• Model: AS4C8M16S-7TCNTR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 8 Meg x 16
• Speed: 7 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Pin Count: 54 pins
• Package Type: TSOP-II

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. WE#
53. CAS#
54. RAS#

Functional Features

• High-speed data transfer
• Random access capability
• Refresh mechanism for maintaining data integrity
• Error correction functionality
• Low power standby mode

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compatibility with various electronic devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited lifespan due to finite write cycles
• Susceptible to data loss in case of power failure

Working Principles

AS4C8M16S-7TCNTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, which are organized into rows and columns. The memory controller sends commands to access specific rows and columns, allowing data to be read from or written to the memory cells.

Detailed Application Field Plans

AS4C8M16S-7TCNTR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. AS4C8M16S-7TIN
2. AS4C8M16S-7TCN
3. AS4C8M16S-7TCNTR-LF
4. AS4C8M16S-7TCNTR-N
5. AS4C8M16S-7TCNTR-T

These alternative models offer similar specifications and functionality to AS4C8M16S-7TCNTR, providing options for different requirements and compatibility with various systems.

In conclusion, AS4C8M16S-7TCNTR is a high-speed synchronous DRAM module used for data storage and retrieval in electronic devices. It offers advantages such as fast operation, large capacity, and low power consumption. However,