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BLF1721M8LS200U
Product Overview
Category
The BLF1721M8LS200U belongs to the category of RF power transistors.
Use
It is used in high-power RF applications such as industrial, scientific, and medical (ISM) equipment, broadcast transmitters, and radar systems.
Characteristics
- High power handling capability
- Broadband frequency range
- High efficiency
- Excellent linearity
Package
The BLF1721M8LS200U comes in a compact and rugged package suitable for various mounting configurations.
Essence
This product is essential for amplifying RF signals with high power requirements.
Packaging/Quantity
The BLF1721M8LS200U is typically packaged individually and is available in varying quantities based on customer requirements.
Specifications
- Frequency Range: 1700 - 2200 MHz
- Output Power: 200W
- Gain: 17dB
- Efficiency: >60%
- Voltage: 32V
- Current: 20A
- Package Type: M8LS
Detailed Pin Configuration
The BLF1721M8LS200U has a detailed pin configuration as follows: - Pin 1: RF Input - Pin 2: RF Output - Pin 3: Gate Bias - Pin 4: Drain Bias - Pin 5: Source
Functional Features
- High power amplification
- Wide frequency coverage
- Robust and reliable performance
- Suitable for demanding RF applications
Advantages
- High power handling capability
- Wide frequency range coverage
- Excellent efficiency and linearity
- Compact and rugged package design
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful thermal management due to high power dissipation
Working Principles
The BLF1721M8LS200U operates based on the principles of RF power amplification using advanced semiconductor technology. It utilizes a combination of high-frequency and high-power handling capabilities to amplify RF signals efficiently and linearly.
Detailed Application Field Plans
The BLF1721M8LS200U is ideally suited for use in the following application fields: - Industrial RF heating systems - Broadcast transmitters - Radar systems - Medical equipment - Scientific instrumentation
Detailed and Complete Alternative Models
Some alternative models to the BLF1721M8LS200U include: - BLF178P - BLF888A - BLF189X
In conclusion, the BLF1721M8LS200U is a high-performance RF power transistor designed for demanding applications that require high power handling, wide frequency coverage, and excellent efficiency. Its robust design and functional features make it an ideal choice for various RF amplification needs.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BLF1721M8LS200U en soluciones técnicas
What is the maximum power output of BLF1721M8LS200U?
- The maximum power output of BLF1721M8LS200U is 200 watts.
What frequency range does BLF1721M8LS200U cover?
- BLF1721M8LS200U covers a frequency range of 1700-2200 MHz.
What type of modulation is supported by BLF1721M8LS200U?
- BLF1721M8LS200U supports various modulation types including QPSK, QAM, and OFDM.
What is the typical efficiency of BLF1721M8LS200U?
- The typical efficiency of BLF1721M8LS200U is around 45-50%.
Does BLF1721M8LS200U require external matching networks?
- Yes, BLF1721M8LS200U requires external matching networks for optimal performance.
What are the recommended operating conditions for BLF1721M8LS200U?
- The recommended operating voltage is 28V and the operating temperature range is -40°C to +85°C.
Is BLF1721M8LS200U suitable for base station applications?
- Yes, BLF1721M8LS200U is suitable for base station and wireless infrastructure applications.
What are the key protection features of BLF1721M8LS200U?
- BLF1721M8LS200U includes protection features such as over-voltage, over-current, and thermal shutdown.
Can BLF1721M8LS200U be used in high-power RF amplifiers?
- Yes, BLF1721M8LS200U is designed for use in high-power RF amplifiers and transmitters.
Are evaluation boards available for BLF1721M8LS200U?
- Yes, evaluation boards are available to facilitate testing and development with BLF1721M8LS200U.