BLF6G10LS-200R,118

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SOT539A - Essence: Power Amplification - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 2400 MHz to 2500 MHz - Output Power: 10 W - Gain: 13.5 dB - Efficiency: 55% - Voltage: 32 V - Current: 3 A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected

Functional Features: - High Power Gain - High Efficiency - Broadband Operation - Thermally Enhanced Package

Advantages: - High Power Output - Wide Frequency Range - Low Distortion - Compact Package

Disadvantages: - Requires Adequate Heat Dissipation - Sensitive to Voltage Fluctuations

Working Principles: The BLF6G10LS-200R,118 operates on the principle of amplifying radio frequency signals using a field-effect transistor (FET) configuration. When a signal is applied to the gate terminal, it modulates the conductivity between the source and drain terminals, resulting in amplified output power at the desired frequency.

Detailed Application Field Plans: - Wireless Communication Systems - Radar Systems - Satellite Communication - Microwave Links

Detailed and Complete Alternative Models: - BLF888A - BLF578XR - BLF2425M7L

This comprehensive entry provides an in-depth understanding of the BLF6G10LS-200R,118 RF Power Transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.