Ampleon USA Inc.
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BLF7G21LS-160P,112
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BLF7G21LS-160P,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency operation - Package: SMD (Surface Mount Device) - Essence: Power amplification for wireless communication systems - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 700 MHz to 2700 MHz - Output Power: 16 W - Gain: 21 dB - Efficiency: 65% - Voltage: 32 V - Current: 14 A

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: VCC

Functional Features: - High linearity - High efficiency - Wide frequency range - Integrated ESD protection

Advantages and Disadvantages: - Advantages: - High power output - Wide operating frequency range - Integrated protection features - Disadvantages: - Higher cost compared to lower power transistors - Requires careful thermal management

Working Principles: The BLF7G21LS-160P,112 operates on the principle of amplifying radio frequency signals using a combination of active and passive components. It utilizes advanced semiconductor technology to achieve high power amplification with high efficiency and linearity.

Detailed Application Field Plans: - Wireless infrastructure equipment - Base stations for cellular networks - Microwave links - Radar systems - Test and measurement equipment

Detailed and Complete Alternative Models: - BLF888A - BLF578XR - MRF13750H

This information provides a comprehensive overview of the BLF7G21LS-160P,112 RF Power Transistor, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BLF7G21LS-160P,112 en soluciones técnicas

  1. What is the operating frequency of BLF7G21LS-160P,112?

    • The operating frequency of BLF7G21LS-160P,112 is 2.5 GHz to 2.7 GHz.

  2. What is the maximum power output of BLF7G21LS-160P,112?

    • The maximum power output of BLF7G21LS-160P,112 is 160 Watts.

  3. What type of modulation does BLF7G21LS-160P,112 support?

    • BLF7G21LS-160P,112 supports various modulation types including QPSK, QAM, and OFDM.

  4. What is the typical efficiency of BLF7G21LS-160P,112?

    • The typical efficiency of BLF7G21LS-160P,112 is around 45% to 55%.

  5. What are the recommended operating conditions for BLF7G21LS-160P,112?

    • BLF7G21LS-160P,112 operates best under a supply voltage of 32 V and at a temperature range of -40°C to +85°C.

  6. Does BLF7G21LS-160P,112 require any external matching components?

    • Yes, BLF7G21LS-160P,112 requires external matching components for optimal performance.

  7. What are the typical applications for BLF7G21LS-160P,112?

    • BLF7G21LS-160P,112 is commonly used in base station amplifiers, wireless infrastructure, and other RF power applications.

  8. Is BLF7G21LS-160P,112 suitable for high-power RF designs?

    • Yes, BLF7G21LS-160P,112 is designed for high-power RF applications and can handle large RF signals.

  9. What are the key features that make BLF7G21LS-160P,112 suitable for technical solutions?

    • BLF7G21LS-160P,112 offers high power density, excellent linearity, and high efficiency, making it ideal for demanding technical solutions.

  10. Are there any specific layout or PCB design considerations when using BLF7G21LS-160P,112?

    • Yes, proper thermal management and RF layout techniques should be employed to ensure optimal performance of BLF7G21LS-160P,112 in technical solutions.