IS29GL01GS-11DHB02-TR

Product Overview

Category

IS29GL01GS-11DHB02-TR belongs to the category of flash memory devices.

Use

This product is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

IS29GL01GS-11DHB02-TR is available in a small form factor package, which makes it suitable for integration into compact electronic devices.

Essence

The essence of IS29GL01GS-11DHB02-TR lies in its ability to store and retrieve data quickly and reliably, providing a crucial component for efficient functioning of electronic devices.

Packaging/Quantity

IS29GL01GS-11DHB02-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Flash
• Capacity: 1 gigabit (128 megabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of IS29GL01GS-11DHB02-TR is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RY/BY# - Ready/Busy status output
8. WP#/ACC - Write protect or accelerated programming control
9. RESET# - Reset input

Functional Features

• High-speed data transfer
• Reliable data storage and retrieval
• Support for various read and write operations
• Built-in error correction mechanisms
• Low power consumption during standby mode
• Compatibility with different electronic devices

Advantages and Disadvantages

Advantages

• Fast read and write operations enhance overall device performance.
• Large storage capacity allows for ample data storage.
• Compact size enables integration into small electronic devices.
• Low power consumption prolongs battery life.
• Compatibility with different devices ensures versatility.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Vulnerable to data corruption in case of power failure during write operations.
• Relatively higher cost compared to other types of memory.

Working Principles

IS29GL01GS-11DHB02-TR utilizes a combination of floating gate transistors and charge storage techniques to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. During read operations, the stored charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

IS29GL01GS-11DHB02-TR finds application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS29GL01GS-11DHB02-TR include: - Samsung K9F1G08U0D - Micron MT29F1G08ABADAWP - Toshiba TC58NVG1S3HTA00

These alternative models provide comparable specifications and can be used as substitutes depending on specific requirements.

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