S29GL064N90TFI070

Product Overview

Category

S29GL064N90TFI070 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 64 gigabits (8 gigabytes) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Reliable performance: Designed to withstand frequent read/write cycles.
• Low power consumption: Optimized for energy efficiency.
• Wide operating temperature range: Suitable for use in different environmental conditions.

Package

S29GL064N90TFI070 is available in a compact and standardized package, commonly known as a TSOP (Thin Small Outline Package). This package ensures easy integration into various electronic devices.

Essence

The essence of S29GL064N90TFI070 lies in its ability to provide high-capacity and reliable data storage in a compact form factor, making it an essential component for modern electronic devices.

Packaging/Quantity

This flash memory device is typically sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Memory Type: Flash
• Memory Size: 64 gigabits (8 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP

Detailed Pin Configuration

The pin configuration of S29GL064N90TFI070 is as follows:

1. VCC: Power supply voltage
2. A0-A21: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed data transfer: S29GL064N90TFI070 offers fast read and write speeds, allowing for efficient data access and storage.
• Reliable performance: Designed to withstand frequent read/write cycles, ensuring long-term reliability.
• Error correction: Incorporates error correction techniques to enhance data integrity.
• Block erase capability: Supports the erasure of large memory blocks, enabling efficient management of stored data.
• Low power consumption: Optimized power usage for extended battery life in portable devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Reliable performance
• Low power consumption
• Wide operating temperature range

Disadvantages

• Parallel interface may limit compatibility with certain systems
• Limited availability of alternative models from different manufacturers

Working Principles

S29GL064N90TFI070 utilizes flash memory technology, which is based on the principle of storing data in floating-gate transistors. These transistors can retain charge even when power is turned off, making them non-volatile. The data is organized into memory cells, which are accessed through an address bus. The device uses various control signals to manage read, write, and erase operations.

Detailed Application Field Plans

S29GL064N90TFI070 finds extensive application in a wide range of electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

While S29GL064N90TFI070 is a popular flash memory device, there are alternative models available from different manufacturers that offer similar functionality. Some notable alternatives include: - Micron MT29F64G08CBABA - Samsung K9GBG08U0A-SCB0 - Toshiba TC58NVG2S0FTA00

These alternative models may have slight variations in specifications and pin configuration but serve the same purpose of providing high-capacity flash memory storage.

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