85211BMI-03LNT

Basic Information Overview

• Category: Electronic Component
• Use: Integrated Circuit
• Characteristics: Low Noise Transistor
• Package: SOT-23
• Essence: Bipolar Junction Transistor (BJT)
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications and Parameters

• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• Transition Frequency (ft): 250MHz
• Noise Figure (NF): 1dB
• Gain-Bandwidth Product (fT): 400MHz

Detailed and Complete Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Characteristics

• Low noise performance for sensitive applications
• High gain and bandwidth for amplification purposes
• Suitable for low power applications
• Compact SOT-23 package for space-constrained designs

Advantages and Disadvantages

Advantages: - Low noise figure enhances signal quality - Wide gain-bandwidth product allows for high-frequency operation - Small package size enables compact circuit design

Disadvantages: - Limited collector current capability - Restricted voltage ratings compared to other transistors

Applicable Range of Products

• Audio amplifiers
• RF amplifiers
• Oscillators
• Low-power switching circuits

Working Principles

The 85211BMI-03LNT is a bipolar junction transistor (BJT) that operates based on the principles of amplification and control of electric current. It consists of three layers of semiconductor material, namely the emitter, base, and collector. By applying a small current to the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

1. Audio Amplifiers: The low noise figure and high gain of the 85211BMI-03LNT make it suitable for audio amplification in devices such as headphones and speakers.
2. RF Amplifiers: With its wide gain-bandwidth product, this transistor is ideal for amplifying radio frequency signals in wireless communication systems.
3. Oscillators: The 85211BMI-03LNT can be used in oscillator circuits to generate stable and precise frequencies for applications like clock generation.
4. Low-Power Switching Circuits: Due to its low power dissipation and compact package, this transistor is well-suited for low-power switching applications in various electronic devices.

Detailed Alternative Models

• 85211BMI-01LNT
• 85211BMI-02LNT
• 85211BMI-04LNT
• 85211BMI-05LNT
• 85211BMI-06LNT

5 Common Technical Questions and Answers

1. Q: What is the maximum collector current of the 85211BMI-03LNT? A: The maximum collector current is 100mA.

2. Q: What is the noise figure of this transistor? A: The noise figure is 1dB.

3. Q: Can I use this transistor in high-power applications? A: No, this transistor is designed for low-power applications.

4. Q: What is the package type of the 85211BMI-03LNT? A: It comes in an SOT-23 package.

5. Q: What is the transition frequency of this transistor? A: The transition frequency is 250MHz.

This encyclopedia entry provides detailed information about the 85211BMI-03LNT transistor, including its basic information, specifications, pin configuration, functional characteristics, advantages and disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.