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IPB160N04S203ATMA1
Product Overview
Category
The IPB160N04S203ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The IPB160N04S203ATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 160A
- On-State Resistance (RDS(on)): 2.3mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 150nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB160N04S203ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current and voltage handling capacity
- Low on-state resistance for minimal power loss
- Fast switching speed for improved efficiency
- Robust construction for reliability in demanding applications
Advantages
- Suitable for high-power applications
- Low conduction losses
- Enhanced thermal performance
- Compatibility with various driving circuits
Disadvantages
- Higher cost compared to standard MOSFETs
- May require more complex drive circuitry
Working Principles
The IPB160N04S203ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB160N04S203ATMA1 is widely used in: - Power supplies - Motor control systems - Renewable energy systems - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB160N04S203ATMA1 include: - IRF1405PBF - FDP8878 - AUIRFN8409
In conclusion, the IPB160N04S203ATMA1 is a high-performance power MOSFET suitable for a wide range of high-power switching applications. Its robust characteristics, functional features, and compatibility make it an essential component in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB160N04S203ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB160N04S203ATMA1?
- The maximum drain-source voltage of IPB160N04S203ATMA1 is 40V.
What is the continuous drain current rating of IPB160N04S203ATMA1?
- The continuous drain current rating of IPB160N04S203ATMA1 is 160A.
What is the on-resistance of IPB160N04S203ATMA1?
- The on-resistance of IPB160N04S203ATMA1 is typically 1.6mΩ at Vgs=10V.
Can IPB160N04S203ATMA1 be used in automotive applications?
- Yes, IPB160N04S203ATMA1 is suitable for automotive applications.
What is the operating temperature range of IPB160N04S203ATMA1?
- The operating temperature range of IPB160N04S203ATMA1 is -55°C to 175°C.
Does IPB160N04S203ATMA1 have built-in ESD protection?
- Yes, IPB160N04S203ATMA1 has built-in ESD protection.
What type of package does IPB160N04S203ATMA1 come in?
- IPB160N04S203ATMA1 comes in a TO-263-7 package.
Is IPB160N04S203ATMA1 suitable for high-power applications?
- Yes, IPB160N04S203ATMA1 is suitable for high-power applications due to its low on-resistance and high current rating.
What gate-source voltage is required to fully turn on IPB160N04S203ATMA1?
- A gate-source voltage of 10V is typically required to fully turn on IPB160N04S203ATMA1.
Can IPB160N04S203ATMA1 be used in switching power supplies?
- Yes, IPB160N04S203ATMA1 is commonly used in switching power supply applications due to its high current handling capability and low on-resistance.