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IPB50N10S3L16ATMA1
Product Overview
Category
The IPB50N10S3L16ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
- RoHS compliant
Package
The IPB50N10S3L16ATMA1 is available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is typically packaged in reels with a quantity of 800 units per reel.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 0.01 Ohms
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Avalanche Energy (EAS): 160mJ
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB50N10S3L16ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
- Low gate charge facilitates efficient gate control.
Advantages
- Suitable for high-power applications
- Low power dissipation
- Enhanced thermal performance
- RoHS compliant
Disadvantages
- May require additional circuitry for protection against voltage spikes and transients
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IPB50N10S3L16ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB50N10S3L16ATMA1 is commonly used in: - Switching power supplies - Motor control systems - Inverters - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
- IPB50N10S3L16ATMA2
- IPB50N10S3L16ATMB1
- IPB50N10S3L16ATMC1
In conclusion, the IPB50N10S3L16ATMA1 is a high-performance power MOSFET suitable for a wide range of high-power switching applications. Its low on-resistance, fast switching speed, and high voltage capability make it an ideal choice for demanding electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB50N10S3L16ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB50N10S3L16ATMA1?
- The maximum drain-source voltage of IPB50N10S3L16ATMA1 is 100V.
What is the continuous drain current rating of IPB50N10S3L16ATMA1?
- The continuous drain current rating of IPB50N10S3L16ATMA1 is 50A.
What is the on-resistance of IPB50N10S3L16ATMA1?
- The on-resistance of IPB50N10S3L16ATMA1 is typically 0.01 ohms.
What is the gate threshold voltage of IPB50N10S3L16ATMA1?
- The gate threshold voltage of IPB50N10S3L16ATMA1 is typically 2.5V.
What is the power dissipation of IPB50N10S3L16ATMA1?
- The power dissipation of IPB50N10S3L16ATMA1 is 250W.
What are the typical applications for IPB50N10S3L16ATMA1?
- IPB50N10S3L16ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.
Is IPB50N10S3L16ATMA1 suitable for automotive applications?
- Yes, IPB50N10S3L16ATMA1 is designed for automotive applications and meets AEC-Q101 standards.
Does IPB50N10S3L16ATMA1 have built-in protection features?
- Yes, IPB50N10S3L16ATMA1 has built-in overcurrent protection and thermal shutdown.
What is the operating temperature range of IPB50N10S3L16ATMA1?
- The operating temperature range of IPB50N10S3L16ATMA1 is -55°C to 175°C.
Is IPB50N10S3L16ATMA1 RoHS compliant?
- Yes, IPB50N10S3L16ATMA1 is RoHS compliant, making it suitable for environmentally friendly designs.