IPD60R650CEBTMA1

Introduction

The IPD60R650CEBTMA1 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPD60R650CEBTMA1 is commonly used in power supply, motor control, and other high-power switching applications.
• Characteristics: It is characterized by low on-resistance, high current capability, and fast switching speed.
• Package: The MOSFET is typically available in a TO-252-3 package.
• Essence: The essence of the IPD60R650CEBTMA1 lies in its ability to efficiently switch high currents with minimal power loss.
• Packaging/Quantity: It is usually packaged in reels or tubes containing a specific quantity per package.

Specifications

• Voltage Rating: 600V
• Current Rating: 6A
• On-Resistance: 0.65Ω
• Package Type: TO-252-3
• Operating Temperature Range: -55°C to 150°C
• Gate-Source Voltage (Max): ±20V
• Continuous Drain Current (at 25°C): 6A

Detailed Pin Configuration

The IPD60R650CEBTMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High Current Capability: The MOSFET can handle high continuous drain currents, making it suitable for power applications.
• Low On-Resistance: This feature ensures minimal power loss during operation.
• Fast Switching Speed: The device offers rapid switching characteristics, enabling efficient power control.

Advantages and Disadvantages

Advantages

• High current handling capability
• Low on-resistance for reduced power loss
• Fast switching speed for efficient power control

Disadvantages

• Sensitivity to static electricity
• Gate drive requirements may be more complex compared to other devices

Working Principles

The IPD60R650CEBTMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow through, and when the voltage is removed, the current flow ceases.

Detailed Application Field Plans

The IPD60R650CEBTMA1 finds extensive use in various applications, including: - Power supplies - Motor control systems - Inverters - Switch-mode power supplies - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the IPD60R650CEBTMA1 include: - IRF540N - FDP8878 - STP80NF55-06

In conclusion, the IPD60R650CEBTMA1 is a versatile power MOSFET with high current capability, low on-resistance, and fast switching speed, making it suitable for diverse power applications.

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