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IPD80N04S306ATMA1
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IPD80N04S306ATMA1

Product Overview

Category

The IPD80N04S306ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power
  • Excellent thermal performance

Package

The IPD80N04S306ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 80A
  • RDS(ON) (Max) @ VGS = 10V: 3.6mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 200W

Detailed Pin Configuration

The IPD80N04S306ATMA1 follows the standard pin configuration for a power MOSFET: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Minimal switching losses
  • Enhanced thermal performance
  • High efficiency in power conversion applications

Advantages

  • High current-handling capacity
  • Reduced power dissipation
  • Improved system reliability
  • Enhanced overall efficiency

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly and installation
  • May require additional circuitry for overvoltage protection

Working Principles

The IPD80N04S306ATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in various applications, including: - Switch-mode power supplies - Motor control circuits - Battery management systems - LED lighting drivers - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the IPD80N04S306ATMA1 include: - IRF840 - FDP8870 - STP80NF03L - AUIRFN8403

In conclusion, the IPD80N04S306ATMA1 is a high-performance power MOSFET with excellent characteristics, making it suitable for a wide range of electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD80N04S306ATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPD80N04S306ATMA1?

    • The maximum drain-source voltage of IPD80N04S306ATMA1 is 40V.

  2. What is the continuous drain current rating of IPD80N04S306ATMA1?

    • The continuous drain current rating of IPD80N04S306ATMA1 is 80A.

  3. What is the on-resistance of IPD80N04S306ATMA1?

    • The on-resistance of IPD80N04S306ATMA1 is typically 3.6mΩ at Vgs=10V.

  4. Can IPD80N04S306ATMA1 be used in automotive applications?

    • Yes, IPD80N04S306ATMA1 is suitable for automotive applications.

  5. What is the operating temperature range of IPD80N04S306ATMA1?

    • The operating temperature range of IPD80N04S306ATMA1 is -55°C to 175°C.

  6. Does IPD80N04S306ATMA1 have built-in ESD protection?

    • Yes, IPD80N04S306ATMA1 has built-in ESD protection.

  7. What is the gate threshold voltage of IPD80N04S306ATMA1?

    • The gate threshold voltage of IPD80N04S306ATMA1 is typically 2V.

  8. Is IPD80N04S306ATMA1 suitable for high-frequency switching applications?

    • Yes, IPD80N04S306ATMA1 is suitable for high-frequency switching applications.

  9. What package type does IPD80N04S306ATMA1 come in?

    • IPD80N04S306ATMA1 comes in a TO-252-3 package.

  10. Can IPD80N04S306ATMA1 be used in power management systems?

    • Yes, IPD80N04S306ATMA1 can be used in power management systems.