Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-220
Essence: Power efficiency and reliability
Packaging/Quantity: Standard TO-220 package, quantity varies by supplier
The IPP200N15N3GXKSA1 follows the standard TO-220 pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High power handling capability - Low conduction losses - Suitable for high frequency applications
Disadvantages: - Higher cost compared to lower power devices - Requires careful thermal management due to high power dissipation
The IPP200N15N3GXKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
The IPP200N15N3GXKSA1 is commonly used in: - Switch-mode power supplies - Motor control applications - Inverters and converters - High power audio amplifiers
Some alternative models to the IPP200N15N3GXKSA1 include: - IRFP250N - STP200N10F7 - FDP2532
This completes the English editing encyclopedia entry structure for IPP200N15N3GXKSA1, providing comprehensive information about the product's category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is the maximum drain-source voltage of IPP200N15N3GXKSA1?
What is the continuous drain current rating of IPP200N15N3GXKSA1?
What is the on-state resistance (RDS(on)) of IPP200N15N3GXKSA1?
Can IPP200N15N3GXKSA1 be used in automotive applications?
What is the operating temperature range of IPP200N15N3GXKSA1?
Does IPP200N15N3GXKSA1 have built-in protection features?
What type of package does IPP200N15N3GXKSA1 come in?
Is IPP200N15N3GXKSA1 suitable for high-power switching applications?
What gate-source voltage is required to fully enhance IPP200N15N3GXKSA1?
Can IPP200N15N3GXKSA1 be used in parallel to increase current handling capability?