IRF6668TR1

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high current applications
Characteristics: High current handling capability, low on-resistance, fast switching speed
Package: D2PAK
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Drain-Source Voltage (Vdss): 200V
• Continuous Drain Current (Id): 130A
• Rds(on) (Max) @ Vgs = 10V: 4.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Power Dissipation (Pd): 300W
• Operating Temperature Range (Tj): -55°C to 175°C

Detailed Pin Configuration

The IRF6668TR1 follows the standard pin configuration for a D2PAK package: - Pin 1 (GATE): Connects to the gate terminal for controlling the MOSFET - Pin 2 (DRAIN): Connects to the drain terminal for the power flow - Pin 3 (SOURCE): Connects to the source terminal for completing the circuit

Functional Features

• High current handling capability allows for use in demanding applications
• Low on-resistance minimizes power loss and heat generation
• Fast switching speed enables efficient operation in high-frequency circuits

Advantages and Disadvantages

Advantages: - High current handling capability - Low on-resistance - Fast switching speed

Disadvantages: - Higher cost compared to lower-rated MOSFETs - Requires careful consideration of thermal management due to high power dissipation

Working Principles

The IRF6668TR1 operates based on the principles of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This allows for efficient switching and control of high currents in various electronic circuits.

Detailed Application Field Plans

The IRF6668TR1 is well-suited for a wide range of applications including: - Power supplies - Motor control systems - High current switching circuits - Inverters and converters - Automotive electronics

Detailed and Complete Alternative Models

• IRF6668: Similar specifications and package, suitable as an alternative
• IRF6668PbF: Lead-free version of the IRF6668 with comparable performance
• IRF6668GPbF: Lead-free, halogen-free alternative with similar characteristics

In conclusion, the IRF6668TR1 is a high-performance Power MOSFET designed for demanding switching applications where high current handling, low on-resistance, and fast switching speed are essential. Its robust characteristics make it suitable for a wide range of applications, from power supplies to motor control systems.

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