Infineon Technologies
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IRS2123STRPBF
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IRS2123STRPBF

Basic Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Gate Driver for Half-Bridge and Full-Bridge Applications
  • Characteristics:
    • High voltage level shifting capability
    • Low propagation delay
    • Protection features against overcurrent and overtemperature
  • Package: Surface Mount, 16-Lead SOIC (Small Outline Integrated Circuit)
  • Essence: Efficiently drives power MOSFETs in various applications
  • Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

  • Supply Voltage Range: 10V to 20V
  • Output Current: ±200mA
  • Operating Temperature Range: -40°C to +125°C
  • Input Logic Compatibility: CMOS, TTL
  • Maximum Propagation Delay: 100ns
  • Undervoltage Lockout Threshold: 8.5V
  • Overcurrent Shutdown Threshold: 1.2V
  • Thermal Shutdown Threshold: 150°C

Detailed Pin Configuration

  1. VCC: Power supply input
  2. HO: High-side gate driver output
  3. LO: Low-side gate driver output
  4. VB: Bootstrap supply voltage input
  5. SD: Shutdown input
  6. GND: Ground reference
  7. VS: High-side floating supply return
  8. HS: High-side floating supply input
  9. LS: Low-side floating supply input
  10. COM: Common connection for bootstrap capacitor
  11. NC: No Connection
  12. NC: No Connection
  13. NC: No Connection
  14. NC: No Connection
  15. NC: No Connection
  16. NC: No Connection

Functional Features

  • High voltage level shifting capability enables efficient driving of power MOSFETs
  • Low propagation delay ensures fast switching performance
  • Overcurrent and overtemperature protection features enhance system reliability
  • Shutdown input allows for easy control of the driver's operation

Advantages and Disadvantages

Advantages: - High voltage level shifting capability - Low propagation delay - Protection features against overcurrent and overtemperature - Shutdown input for easy control

Disadvantages: - Limited quantity per reel (2500 units)

Working Principles

The IRS2123STRPBF is a gate driver IC designed to drive power MOSFETs in half-bridge and full-bridge applications. It utilizes high voltage level shifting capability to efficiently switch the MOSFETs, resulting in improved power conversion efficiency. The low propagation delay ensures fast switching performance, reducing power losses. The driver also incorporates protection features such as overcurrent and overtemperature shutdown, safeguarding the system from potential damage.

Detailed Application Field Plans

The IRS2123STRPBF is commonly used in various applications including: - Motor drives - Switch-mode power supplies - Solar inverters - Uninterruptible power supplies (UPS) - LED lighting systems

Detailed and Complete Alternative Models

  1. IRS2121STRPBF: Similar gate driver IC with 8-pin SOIC package
  2. IRS21844SPBF: Gate driver IC with integrated bootstrap diode and shoot-through protection
  3. IRS2336DJTRPBF: High-voltage, high-speed gate driver IC for three-phase motor control

(Note: This list is not exhaustive and there are other alternative models available in the market.)

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IRS2123STRPBF en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IRS2123STRPBF in technical solutions:

  1. Q: What is IRS2123STRPBF? A: IRS2123STRPBF is a high-performance half-bridge gate driver IC designed for driving MOSFETs and IGBTs in applications such as motor drives, power supplies, and inverters.

  2. Q: What is the maximum voltage rating of IRS2123STRPBF? A: The maximum voltage rating of IRS2123STRPBF is typically around 600V.

  3. Q: Can IRS2123STRPBF be used with both MOSFETs and IGBTs? A: Yes, IRS2123STRPBF can be used with both MOSFETs and IGBTs, making it versatile for various applications.

  4. Q: What is the output current capability of IRS2123STRPBF? A: IRS2123STRPBF has a high peak output current capability of up to 2A, allowing it to drive power devices efficiently.

  5. Q: Is IRS2123STRPBF suitable for high-frequency switching applications? A: Yes, IRS2123STRPBF is designed for high-frequency operation, making it suitable for applications that require fast switching speeds.

  6. Q: Does IRS2123STRPBF have built-in protection features? A: Yes, IRS2123STRPBF includes various protection features like under-voltage lockout (UVLO), over-current protection (OCP), and thermal shutdown (TSD) to ensure safe operation.

  7. Q: What is the operating temperature range of IRS2123STRPBF? A: IRS2123STRPBF has an extended operating temperature range of -40°C to 125°C, allowing it to be used in harsh environments.

  8. Q: Can IRS2123STRPBF be directly powered from the main supply voltage? A: Yes, IRS2123STRPBF can be directly powered from the main supply voltage, simplifying the overall circuit design.

  9. Q: Does IRS2123STRPBF support adjustable dead-time control? A: Yes, IRS2123STRPBF provides adjustable dead-time control, allowing precise control over the switching characteristics of the power devices.

  10. Q: What is the package type of IRS2123STRPBF? A: IRS2123STRPBF is available in a small surface-mount SOIC-8 package, which is widely used and easy to handle in various applications.

Please note that these answers are general and may vary depending on the specific datasheet and application requirements.