IS42S16400J-5BL-TR

Product Overview

Category

IS42S16400J-5BL-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16400J-5BL-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16400J-5BL-TR lies in its ability to provide fast and efficient data storage and retrieval for various computing applications.

Packaging/Quantity

IS42S16400J-5BL-TR is typically packaged in trays or reels and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Supply Voltage: 3.3V
• Clock Frequency: 166 MHz
• Access Time: 5 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS42S16400J-5BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VDD
48. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low-power standby mode
• Error correction code (ECC) support (optional)

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with older systems

Working Principles

IS42S16400J-5BL-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, which are organized into rows and columns. The memory controller sends commands and addresses to access specific data stored in the memory cells.

Detailed Application Field Plans

IS42S16400J-5BL-TR finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Embedded systems 6. Industrial automation 7. Medical devices 8. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S16400J-5BL-TR include: 1. MT48LC16M16A2P-75: Micron Technology Inc. 2. K4S561632H-UC75: Samsung Electronics Co., Ltd. 3. HYB39S256160FE-7: Infineon Technologies AG 4. M5M5256DFP-70LL: Renesas Electronics Corporation 5. AS4C16M16SA-6TCN: Alliance Memory Inc.

These alternative models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS42S16400J-5BL-TR is a high-performance DRAM module that offers fast data access, large storage capacity, and low power consumption. It finds applications in various