IS61NVP102418-200B3-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Tape and reel, 200 pieces per reel

Specifications

• Part Number: IS61NVP102418-200B3-TR
• Memory Type: SRAM (Static Random Access Memory)
• Density: 2 Megabits (256K x 8)
• Operating Voltage: 2.5V - 3.6V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years

Detailed Pin Configuration

The IS61NVP102418-200B3-TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. /CE
35. /OE
36. /WE
37. I/O0
38. I/O1
39. I/O2
40. I/O3
41. I/O4
42. I/O5
43. I/O6
44. I/O7
45. GND
46. NC
47. NC
48. VCC

Functional Features

• High-speed operation allows for fast data access.
• Low-power consumption makes it suitable for battery-powered devices.
• Non-volatile memory retains data even when power is removed.
• BGA package provides a compact and reliable form factor.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption extends battery life in portable devices. - Non-volatile memory ensures data integrity during power cycles. - Compact BGA package saves board space and enhances reliability.

Disadvantages: - Limited density compared to other memory technologies. - Higher cost per bit compared to some alternative memory solutions. - Sensitivity to electromagnetic interference (EMI) due to high-speed operation.

Working Principles

The IS61NVP102418-200B3-TR is a static random access memory (SRAM) device. It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized into a matrix of rows and columns, allowing for random access to any location within the memory array. When an address is provided, the corresponding data stored at that location can be read or written.

Detailed Application Field Plans

The IS61NVP102418-200B3-TR is commonly used in various applications, including: - Networking equipment - Telecommunications systems - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to the IS61NVP102418-200B3-TR include: - IS61LV25616AL-10TLI: 256K x 16 SRAM, 10 ns access time - CY62157EV30LL-45ZSXI: 2 Megabit (128K x 16) SRAM, 45 ns access time - AS6C4008-55SIN: 4 Megabit (512K x 8) SRAM, 55 ns access time

These alternative models offer different densities, access times, and package options to suit specific application requirements.

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