IS61WV25616BLL-10TL

Product Overview

Category

IS61WV25616BLL-10TL belongs to the category of Static Random Access Memory (SRAM).

Use

This product is commonly used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The IS61WV25616BLL-10TL offers fast access times, allowing for efficient data retrieval.
• Low power consumption: This SRAM module is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable performance: It provides reliable data storage and retrieval capabilities, ensuring the integrity of stored information.
• Compact package: The IS61WV25616BLL-10TL comes in a compact package, enabling easy integration into different circuit designs.

Package and Quantity

The IS61WV25616BLL-10TL is typically available in a small outline J-lead (SOJ) package. The quantity may vary depending on the supplier or customer requirements.

Essence

The essence of IS61WV25616BLL-10TL lies in its ability to provide high-speed and low-power memory functionality, contributing to the overall performance and efficiency of electronic devices.

Packaging/Quantity

The IS61WV25616BLL-10TL is usually packaged in trays or reels, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Organization: 256K words x 16 bits
• Supply voltage: 3.3V
• Access time: 10 ns
• Operating temperature range: -40°C to +85°C
• Standby current: 5 mA (max)
• Package type: SOJ

Detailed Pin Configuration

The IS61WV25616BLL-10TL has the following pin configuration:

1. Vcc
2. WE#
3. A0-A17
4. DQ0-DQ15
5. OE#
6. CE#

Functional Features

• High-speed operation: The IS61WV25616BLL-10TL offers fast access times, allowing for quick data retrieval and processing.
• Low-power consumption: This SRAM module is designed to minimize power usage, making it suitable for energy-efficient devices.
• Easy integration: The compact package and standard pin configuration facilitate seamless integration into various circuit designs.
• Reliable performance: The IS61WV25616BLL-10TL provides reliable data storage and retrieval capabilities, ensuring the integrity of stored information.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Low-power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into different circuit designs.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory solutions.

Working Principles

The IS61WV25616BLL-10TL operates based on static random access memory principles. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the chip are organized in a matrix, with each cell storing one bit of data. Accessing and manipulating data in the memory is achieved through address decoding and control signals provided by the system.

Detailed Application Field Plans

The IS61WV25616BLL-10TL finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Mobile devices - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the IS61WV25616BLL-10TL include: - IS61WV25616BLL-12TL: Similar to the IS61WV25616BLL-10TL, but with a slightly slower access time of 12 ns. - IS61WV25616BLL-15TL: Another variant with a slower access time of 15 ns, suitable for applications where speed is not critical. - IS61WV25616BLL-8TL: This model offers a faster access time of 8 ns, ideal for applications requiring high-speed data processing.

These alternative models provide flexibility in choosing the appropriate SRAM module based on specific application requirements.

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