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IXGT35N120B
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IXGT35N120B

Product Overview

Category: Power semiconductor device
Use: High-power switching applications
Characteristics: High voltage, high current capability
Package: TO-268
Essence: Efficient power control
Packaging/Quantity: Single unit

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 35A
  • Package Type: TO-268
  • Mounting Type: Through Hole
  • Configuration: Single

Detailed Pin Configuration

  1. Gate
  2. Collector
  3. Emitter

Functional Features

  • High voltage capability
  • Low on-state voltage
  • Fast switching speed
  • Low switching losses

Advantages and Disadvantages

Advantages: - High power handling capability - Low conduction losses - Fast switching speed

Disadvantages: - High switching losses - Requires careful thermal management

Working Principles

The IXGT35N120B is a high-voltage insulated gate bipolar transistor (IGBT) designed for high-power switching applications. It operates by controlling the flow of current between the collector and emitter using the gate signal.

Detailed Application Field Plans

The IXGT35N120B is commonly used in: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating - Welding equipment

Detailed and Complete Alternative Models

  1. IXGH35N120B
  2. IRG7PH35UD1PBF
  3. FGA35N120ANTD

In conclusion, the IXGT35N120B is a high-voltage IGBT suitable for various high-power switching applications. Its efficient power control, high voltage and current capabilities, and fast switching speed make it an ideal choice for demanding industrial and commercial applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IXGT35N120B en soluciones técnicas

  1. What is the maximum voltage rating of IXGT35N120B?

    • The maximum voltage rating of IXGT35N120B is 1200V.

  2. What is the maximum current rating of IXGT35N120B?

    • The maximum current rating of IXGT35N120B is 35A.

  3. What type of package does IXGT35N120B come in?

    • IXGT35N120B comes in a TO-268 package.

  4. What are the typical applications for IXGT35N120B?

    • IXGT35N120B is commonly used in applications such as motor drives, inverters, and power supplies.

  5. What is the on-state voltage drop of IXGT35N120B?

    • The on-state voltage drop of IXGT35N120B is typically around 2.2V at 35A.

  6. Does IXGT35N120B have built-in protection features?

    • No, IXGT35N120B does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  7. What is the maximum junction temperature of IXGT35N120B?

    • The maximum junction temperature of IXGT35N120B is 150°C.

  8. Is IXGT35N120B suitable for high-frequency switching applications?

    • Yes, IXGT35N120B is suitable for high-frequency switching due to its fast switching characteristics.

  9. What is the gate threshold voltage of IXGT35N120B?

    • The gate threshold voltage of IXGT35N120B is typically around 3V.

  10. Can IXGT35N120B be used in parallel to increase current handling capability?

    • Yes, IXGT35N120B can be used in parallel to increase the overall current handling capability in a system.