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IXSH35N120B
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IXSH35N120B

Product Overview

Category

The IXSH35N120B belongs to the category of power semiconductor devices.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state voltage drop
  • Fast switching speed
  • Robust and reliable performance

Package

The IXSH35N120B is typically available in a TO-247 package, which provides efficient thermal dissipation.

Essence

This product is essential for controlling high-power electrical loads in industrial and automotive applications.

Packaging/Quantity

The IXSH35N120B is commonly packaged in quantities of 25 or 50 units per pack.

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 35A
  • Maximum Operating Temperature: 150°C
  • Gate Threshold Voltage: 3.0V
  • Reverse Recovery Time: 60ns
  • Diode Forward Voltage: 1.8V at 35A

Detailed Pin Configuration

The IXSH35N120B has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced diode recovery performance

Advantages

  • Suitable for high-power applications
  • Efficient energy conversion
  • Reliable and durable
  • Low power dissipation

Disadvantages

  • Higher cost compared to lower-rated devices
  • Requires proper heat management due to high power dissipation

Working Principles

The IXSH35N120B operates based on the principles of field-effect transistors, utilizing its high voltage and current handling capabilities to control the flow of power in electronic circuits.

Detailed Application Field Plans

The IXSH35N120B is widely used in the following application fields: - Industrial motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Electric vehicle powertrains - High-power inverters

Detailed and Complete Alternative Models

Some alternative models to the IXSH35N120B include: - IXYS IXSH40N120B - Infineon IGBT35N120BFD - STMicroelectronics STGW35NC120HD

In conclusion, the IXSH35N120B is a high-performance power semiconductor device that offers efficient and reliable control of high-power electrical loads in various industrial and automotive applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IXSH35N120B en soluciones técnicas

  1. What is IXSH35N120B?

    • IXSH35N120B is a high voltage IGBT (Insulated Gate Bipolar Transistor) designed for various technical solutions requiring high power switching.

  2. What are the key features of IXSH35N120B?

    • The key features include a high voltage rating of 1200V, a current rating of 35A, low VCE(sat), and fast switching speed.

  3. What applications can IXSH35N120B be used for?

    • IXSH35N120B is commonly used in applications such as motor drives, induction heating, UPS systems, and welding equipment.

  4. What is the maximum operating temperature for IXSH35N120B?

    • The maximum operating temperature for IXSH35N120B is typically around 150°C.

  5. How does IXSH35N120B compare to other IGBTs in its class?

    • IXSH35N120B offers a good balance of high voltage capability, current handling, and switching performance compared to other IGBTs in its class.

  6. What are the recommended gate drive requirements for IXSH35N120B?

    • The recommended gate drive requirements include a minimum gate-emitter voltage, gate charge, and gate resistor values to ensure proper switching behavior.

  7. Does IXSH35N120B require any special cooling considerations?

    • Yes, IXSH35N120B may require appropriate thermal management to dissipate heat effectively, especially in high-power applications.

  8. Are there any specific layout considerations when using IXSH35N120B in a circuit?

    • Proper PCB layout, including minimizing stray inductance and ensuring adequate isolation, is important for optimal performance and reliability.

  9. What protection features does IXSH35N120B offer?

    • IXSH35N120B may include built-in features such as short-circuit protection, overcurrent protection, and temperature sensing for enhanced system safety.

  10. Where can I find detailed application notes and reference designs for IXSH35N120B?

    • Detailed application notes and reference designs for IXSH35N120B can often be found on the manufacturer's website or through their technical support resources.