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IXTH180N10T
Introduction
The IXTH180N10T is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-220AB
- Essence: Power management in electronic systems
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer
Specifications
- Voltage Rating: 100V
- Current Rating: 180A
- On-Resistance: 10mΩ
- Gate Threshold Voltage: 2V
- Maximum Power Dissipation: 300W
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IXTH180N10T features a standard TO-220AB package with three pins: 1. Gate (G): Input terminal for controlling the MOSFET 2. Drain (D): Output terminal connected to the load 3. Source (S): Common terminal connected to ground
Functional Features
- High voltage capability allows for use in various power applications
- Low on-resistance minimizes power loss and heat generation
- Fast switching speed enables efficient operation in switching circuits
Advantages and Disadvantages
Advantages
- High voltage rating suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for enhanced performance
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful handling and ESD protection due to sensitivity
Working Principles
The IXTH180N10T operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET conducts, allowing current to flow through the load.
Detailed Application Field Plans
The IXTH180N10T finds extensive use in the following application fields: - Switching power supplies - Motor control - Inverters - Audio amplifiers - LED lighting
Detailed and Complete Alternative Models
- IXTH160N10T: Similar specifications with slightly lower current rating
- IXTH200N10T: Similar specifications with higher current rating
- IRF1405: Alternative MOSFET with comparable characteristics
In conclusion, the IXTH180N10T power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile component in various electronic applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IXTH180N10T en soluciones técnicas
What is the maximum drain-source voltage of IXTH180N10T?
- The maximum drain-source voltage of IXTH180N10T is 100V.
What is the continuous drain current rating of IXTH180N10T?
- The continuous drain current rating of IXTH180N10T is 180A.
What is the on-state resistance (RDS(on)) of IXTH180N10T?
- The on-state resistance (RDS(on)) of IXTH180N10T is typically 0.009 ohms.
What is the gate threshold voltage of IXTH180N10T?
- The gate threshold voltage of IXTH180N10T is typically 2.5V.
What are the typical applications for IXTH180N10T?
- IXTH180N10T is commonly used in high-current switching applications such as motor control, power supplies, and inverters.
What is the operating temperature range of IXTH180N10T?
- The operating temperature range of IXTH180N10T is -55°C to 175°C.
Does IXTH180N10T require a heat sink for high-power applications?
- Yes, for high-power applications, it is recommended to use a heat sink to ensure proper thermal management.
Can IXTH180N10T be used in automotive applications?
- Yes, IXTH180N10T is suitable for automotive applications such as electric vehicle power systems and battery management.
What is the gate charge of IXTH180N10T?
- The gate charge of IXTH180N10T is typically 150nC.
Is IXTH180N10T RoHS compliant?
- Yes, IXTH180N10T is RoHS compliant, making it suitable for environmentally conscious designs.