MX29GL512FDXFI-12G

Product Overview

Category

The MX29GL512FDXFI-12G belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The MX29GL512FDXFI-12G offers a storage capacity of 512 megabytes (MB), allowing users to store a large amount of data.
• Fast data transfer rate: With a high-speed interface, this flash memory device enables quick data transfer between the device and the host system.
• Reliable performance: The MX29GL512FDXFI-12G is known for its durability and long lifespan, ensuring reliable data storage over time.
• Low power consumption: This flash memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MX29GL512FDXFI-12G comes in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MX29GL512FDXFI-12G is typically packaged in a surface-mount package (SMD) or a ball grid array (BGA) package. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Model: MX29GL512FDXFI-12G
• Storage Capacity: 512 MB
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMD/BGA
• Data Transfer Rate: Up to 120 Megabits per second (Mbps)
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The MX29GL512FDXFI-12G flash memory device has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte select control
9. RY/BY#: Ready/busy status output

Functional Features

• Block Erase/Program: The MX29GL512FDXFI-12G supports block-level erase and program operations, allowing for efficient management of data.
• Sector Protection: This flash memory device offers sector protection features, enabling users to protect specific sectors from accidental erasure or modification.
• Read/Write Performance: With its high-speed interface, the MX29GL512FDXFI-12G provides fast read and write performance, ensuring quick access to stored data.
• Error Correction Code (ECC): ECC functionality is integrated into this flash memory device, enhancing data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity over time.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the device.
• Higher cost compared to other lower-capacity flash memory options.
• Compatibility with older systems may be limited due to the parallel interface.

Working Principles

The MX29GL512FDXFI-12G flash memory device utilizes a combination of floating-gate transistors and semiconductor technology to store and retrieve digital data. It employs a parallel interface to communicate with the host system, allowing for efficient data transfer.

When data is written to the device, the floating-gate transistors are programmed to store the information. During read operations, the stored data is retrieved by sensing the electrical charge on the floating gates. The MX29GL512FDXFI-12G's integrated ECC functionality helps maintain data integrity by detecting and correcting errors that may occur during read or write operations.

Detailed Application Field Plans

The MX29GL512FDXFI-12G flash memory device finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Its high storage capacity, fast data transfer rate, and reliability make it suitable for these applications, where large amounts of data need to be stored and accessed quickly.

Alternative Models

For users seeking alternative flash memory devices, the following models can be considered: - MX29LV512T: Similar specifications with a lower operating voltage range. - MX29GL256F: Lower storage capacity with similar performance characteristics. -