JR28F032M29EWBB TR

Product Overview

Category

JR28F032M29EWBB TR belongs to the category of flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High-speed read and write operations.
• Compact size.
• Durable and reliable.
• Low power consumption.

Package

JR28F032M29EWBB TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of JR28F032M29EWBB TR lies in its ability to store and retrieve data quickly and reliably, providing a crucial component for the functioning of electronic devices.

Packaging/Quantity

JR28F032M29EWBB TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 32 megabits (4 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• High-speed data transfer: JR28F032M29EWBB TR supports fast read and write operations, enabling efficient data handling.
• Error correction: Built-in error correction mechanisms ensure data integrity and reliability.
• Wear leveling: Implements wear leveling algorithms to evenly distribute data writes across memory cells, prolonging the lifespan of the flash memory.
• Security features: Provides hardware-based security features like password protection and encryption to safeguard stored data.

Advantages and Disadvantages

Advantages

• Fast read and write speeds enhance overall device performance.
• Compact size allows for integration into small electronic devices.
• Low power consumption extends battery life.
• Durable and reliable, ensuring data integrity over extended periods.
• Offers security features to protect sensitive information.

Disadvantages

• Limited storage capacity compared to other types of memory.
• Relatively higher cost per unit compared to traditional hard drives.

Working Principles

JR28F032M29EWBB TR utilizes NAND flash memory technology. It consists of a grid of memory cells that store data in the form of electrical charges. These charges are trapped within floating gate transistors, representing binary values (0s and 1s). When reading or writing data, electrical voltages are applied to specific memory cells to manipulate the charge levels, allowing for data retrieval or modification.

Detailed Application Field Plans

JR28F032M29EWBB TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to JR28F032M29EWBB TR include: - Micron MT25QL128ABA1EW7-0SIT - Samsung K9F2G08U0C-SCB0 - Toshiba TC58NVG0S3ETA00

These alternative models offer similar functionality and can be used as substitutes depending on specific requirements.

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