JR28F032M29EWTB TR

Product Overview

Category

JR28F032M29EWTB TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Durable and reliable

Package

JR28F032M29EWTB TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of JR28F032M29EWTB TR lies in its ability to store and retrieve digital data quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of JR28F032M29EWTB TR units.

Specifications

• Storage Capacity: 32GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. CS - Chip select
4. SCK - Serial clock
5. SI - Serial input
6. SO - Serial output
7. WP - Write protect
8. HOLD - Hold input

Functional Features

• High-speed data transfer
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Secure data protection mechanisms
• Support for software and hardware write protection

Advantages

• Large storage capacity allows for storing a vast amount of data
• Fast read and write speeds enable quick access to stored information
• Compact size facilitates integration into various electronic devices
• Low power consumption prolongs battery life
• Durable and reliable, ensuring data integrity

Disadvantages

• Relatively higher cost compared to other storage options
• Limited endurance compared to some other non-volatile memory technologies

Working Principles

JR28F032M29EWTB TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When reading data, the charges are measured to determine the stored information. Writing data involves applying voltage to the appropriate transistors to either trap or release charges.

Detailed Application Field Plans

JR28F032M29EWTB TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. JR28F064M29EWTB TR - 64GB storage capacity
2. JR28F128M29EWTB TR - 128GB storage capacity
3. JR28F256M29EWTB TR - 256GB storage capacity

These alternative models offer increased storage capacities while maintaining similar characteristics and functionality as JR28F032M29EWTB TR.

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