M29F800FT5AN6E2

Product Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: High-density, Flash Technology
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Reliable and fast data storage solution
• Packaging/Quantity: Individually packaged, quantity varies based on order size

Specifications

• Memory Type: Flash
• Memory Size: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Write/Erase Cycles: 100,000 minimum
• Data Retention: 20 years minimum

Detailed Pin Configuration

The M29F800FT5AN6E2 IC has a total of 48 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE - Chip Enable Input
18. OE - Output Enable Input
19. WE - Write Enable Input
20. VSS - Ground
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. VCC - Power Supply
30. RP - Ready/Busy Output
31. BYTE - Byte/Word Organization Input
32. A16 - Address Input
33. A17 - Address Input
34. A18 - Address Input
35. A19 - Address Input
36. A20 - Address Input
37. A21 - Address Input
38. A22 - Address Input
39. A23 - Address Input
40. A24 - Address Input
41. A25 - Address Input
42. A26 - Address Input
43. A27 - Address Input
44. A28 - Address Input
45. A29 - Address Input
46. A30 - Address Input
47. A31 - Address Input
48. VPP - Programming Voltage

Functional Features

• High-density non-volatile memory for data storage
• Flash technology allows for fast read and write operations
• Reliable performance with a long data retention period
• Low power consumption for efficient operation
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access time - Low power consumption - Long data retention period - Versatile application possibilities

Disadvantages: - Limited write/erase cycles - Higher cost compared to other memory technologies

Working Principles

The M29F800FT5AN6E2 is based on Flash memory technology. It utilizes a grid of memory cells, where each cell can store multiple bits of data. The memory cells are organized in a matrix-like structure, with rows and columns forming the addressable locations.

To write data, an electrical charge is applied to the appropriate memory cells, altering their state. Reading data involves detecting the state of the memory cells by measuring the electrical current flowing through them. The IC also supports erasing data by resetting the memory cells to their initial state.

Detailed Application Field Plans

The M29F800FT5AN6E2 IC finds applications in various electronic devices and systems, including but not limited to:

1. Embedded Systems: Used for program storage in microcontrollers and microprocessors.
2. Consumer Electronics: Provides non-volatile memory for digital cameras, set-top boxes, and portable media players.
3. Automotive Electronics: Used in automotive control units for storing firmware and data.
4. Industrial Control Systems: Enables reliable data storage in PLCs (Programmable Logic Controllers) and other industrial automation equipment.
5. Communication Devices: Utilized in routers, switches, and network equipment for