M29W800DT45ZE6E

Product Overview

Category

M29W800DT45ZE6E belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The data stored in M29W800DT45ZE6E is retained even when power is turned off.
• High capacity: It offers a storage capacity of 800 megabits (100 megabytes).
• Fast access time: The chip provides quick access to stored data, reducing latency.
• Reliable performance: M29W800DT45ZE6E ensures data integrity and durability.
• Low power consumption: It operates efficiently, consuming minimal power during read and write operations.

Package and Quantity

M29W800DT45ZE6E is available in a compact package, typically a surface-mount device (SMD). The exact package type may vary depending on the manufacturer. It is usually sold individually or in bulk quantities, depending on the customer's requirements.

Specifications

• Memory Type: Flash memory
• Capacity: 800 megabits (100 megabytes)
• Voltage Range: 2.7V - 3.6V
• Access Time: 45 nanoseconds
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of M29W800DT45ZE6E is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/ACC: Reset/acceleration control signal
8. BYTE#: Byte enable control signal
9. RY/BY#: Ready/busy status output

Functional Features

• Erase and Program Operations: M29W800DT45ZE6E supports both erase and program operations, allowing users to modify the stored data.
• Block Architecture: The chip is organized into multiple blocks, enabling efficient erasure and programming of specific sections without affecting the entire memory.
• Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors that may occur during data transfer or storage.
• Lock Bits: M29W800DT45ZE6E includes lock bits that can be set to protect critical data from accidental modification.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable performance
• Supports erase and program operations
• Error correction capabilities

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

M29W800DT45ZE6E utilizes the principles of floating-gate transistors to store and retrieve data. It employs a grid of memory cells, where each cell consists of a floating-gate transistor capable of trapping electrical charges. These trapped charges represent binary data (0s and 1s). By applying appropriate voltages to the control gates and bit lines, data can be written, read, or erased from the memory cells.

Detailed Application Field Plans

M29W800DT45ZE6E finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to M29W800DT45ZE6E include: - M29W800DB45N1E - M29W800DT70N1E - M29W800DT90N1E - M29W800DT120N1E

These models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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