Micron Technology Inc.
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
MT28F004B5VG-8 TET
Ver Detalle Hojas de datos

MT28F004B5VG-8 TET

Product Overview

Category

MT28F004B5VG-8 TET belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

MT28F004B5VG-8 TET is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT28F004B5VG-8 TET lies in its ability to store and retrieve data quickly and reliably, providing a crucial component for the functioning of electronic devices.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the requirements of the customer or manufacturer.

Specifications

  • Storage Capacity: 4GB
  • Interface: Parallel
  • Voltage Range: 2.7V - 3.6V
  • Access Time: 80ns
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years

Detailed Pin Configuration

  1. VCC (Power Supply)
  2. GND (Ground)
  3. A0-A18 (Address Inputs)
  4. CE (Chip Enable)
  5. OE (Output Enable)
  6. WE (Write Enable)
  7. I/O0-I/O7 (Data Input/Output)
  8. RY/BY# (Ready/Busy Output)

Functional Features

  • Erase and program operations can be performed on individual blocks.
  • Automatic hardware and software data protection mechanisms.
  • Built-in error correction code (ECC) for enhanced reliability.
  • Support for multiple read and write cycles.

Advantages

  • High storage capacity allows for the storage of large amounts of data.
  • Fast read and write speeds enable quick access to stored information.
  • Non-volatile memory ensures data retention even when power is disconnected.
  • Compact size facilitates integration into various electronic devices.
  • Low power consumption helps conserve battery life.

Disadvantages

  • Limited number of erase and program cycles before degradation.
  • Relatively higher cost compared to other types of memory.
  • Susceptible to physical damage if mishandled.

Working Principles

MT28F004B5VG-8 TET utilizes a floating gate transistor technology, where charges are trapped in a floating gate to represent binary data. The presence or absence of charge determines the state of each memory cell, allowing for the storage and retrieval of data.

Detailed Application Field Plans

MT28F004B5VG-8 TET finds applications in various fields, including: 1. Consumer electronics 2. Automotive systems 3. Industrial automation 4. Medical devices 5. Networking equipment

Detailed and Complete Alternative Models

  1. MT28F004B5VG-10 TET
  2. MT28F004B5VG-12 TET
  3. MT28F004B5VG-15 TET
  4. MT28F004B5VG-20 TET
  5. MT28F004B5VG-25 TET

These alternative models offer similar functionality and characteristics but may differ in terms of access time, voltage range, or storage capacity.

Word count: 491 words

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT28F004B5VG-8 TET en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of MT28F004B5VG-8 TET in technical solutions:

  1. Q: What is MT28F004B5VG-8 TET? A: MT28F004B5VG-8 TET is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Q: What are the key features of MT28F004B5VG-8 TET? A: Some key features of MT28F004B5VG-8 TET include a storage capacity of 4 megabits, a supply voltage range of 2.7V to 3.6V, and a maximum operating frequency of 50 MHz.

  3. Q: In what type of applications can MT28F004B5VG-8 TET be used? A: MT28F004B5VG-8 TET can be used in various applications such as embedded systems, consumer electronics, automotive systems, industrial control systems, and more.

  4. Q: What is the data transfer rate of MT28F004B5VG-8 TET? A: The data transfer rate of MT28F004B5VG-8 TET is up to 8 MB/s (megabytes per second).

  5. Q: Can MT28F004B5VG-8 TET be used for code storage in microcontrollers? A: Yes, MT28F004B5VG-8 TET can be used for code storage in microcontrollers as it provides non-volatile memory storage.

  6. Q: Does MT28F004B5VG-8 TET support wear-leveling algorithms? A: No, MT28F004B5VG-8 TET does not have built-in wear-leveling algorithms. External software or firmware solutions can be implemented for wear-leveling.

  7. Q: What is the operating temperature range of MT28F004B5VG-8 TET? A: The operating temperature range of MT28F004B5VG-8 TET is typically -40°C to +85°C.

  8. Q: Can MT28F004B5VG-8 TET be used in high-reliability applications? A: Yes, MT28F004B5VG-8 TET is designed to meet the requirements of high-reliability applications and has features like error correction codes (ECC) to enhance data integrity.

  9. Q: Does MT28F004B5VG-8 TET support hardware encryption? A: No, MT28F004B5VG-8 TET does not have built-in hardware encryption capabilities. Encryption can be implemented at the software or system level.

  10. Q: Are there any specific programming considerations for MT28F004B5VG-8 TET? A: Yes, MT28F004B5VG-8 TET requires specific programming voltages and timing sequences as specified in the datasheet. It is important to follow the recommended guidelines for successful programming.

Please note that the answers provided here are general and may vary depending on the specific requirements and use cases. It is always recommended to refer to the official documentation and datasheet for accurate and up-to-date information.