MT28F004B5VG-8 TET TR

Product Overview

Category

MT28F004B5VG-8 TET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

MT28F004B5VG-8 TET TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably, providing a crucial component for modern electronic devices.

Packaging/Quantity

MT28F004B5VG-8 TET TR is typically packaged in reels or trays, with each package containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns
• Erase/Program Suspend/Erase Suspend: Yes
• Organization: 256K x 16
• Package Type: TSOP

Detailed Pin Configuration

The pin configuration of MT28F004B5VG-8 TET TR is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. OE#
20. WE#
21. BYTE#
22. NC
23. DQ0
24. DQ1
25. DQ2
26. DQ3
27. DQ4
28. DQ5
29. DQ6
30. DQ7
31. VSS

Functional Features

• High-speed data transfer
• Reliable data retention
• Erase and program operations
• Suspend and resume functionality
• Byte-level access for efficient data manipulation
• Low power consumption during standby mode

Advantages and Disadvantages

Advantages

• Fast read and write operations enhance overall device performance.
• Non-volatile memory ensures data integrity even during power loss.
• Compact size allows for easy integration into various electronic devices.
• Low power consumption prolongs battery life.
• Suspend and resume functionality provides flexibility in data management.

Disadvantages

• Limited storage capacity compared to higher-capacity flash memory options.
• Higher cost per unit compared to other memory technologies.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

MT28F004B5VG-8 TET TR utilizes a floating gate transistor technology to store digital information. The memory cells consist of transistors that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate, representing binary values. These charges can be read back later to retrieve the stored information.

Detailed Application Field Plans

MT28F004B5VG-8 TET TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to MT28F004B5VG-8 TET TR include: - MT28F004B3VG-9 TET TR - MT28F004B1VG-12 TET TR - MT28F004B6VG-10 TET TR - MT28F004B4VG-7 TET TR

These alternative models offer similar functionality and characteristics, but may differ in terms of capacity, speed, or package type.

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