Micron Technology Inc.
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MT28F800B3WP-9 T
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MT28F800B3WP-9 T

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile
    • High-density
    • Flash memory technology
  • Package: TSSOP (Thin Shrink Small Outline Package)
  • Essence: Reliable and efficient data storage solution
  • Packaging/Quantity: Available in reels, typically 2500 units per reel

Specifications

  • Memory Type: NAND Flash
  • Capacity: 8 Megabits (1 Megabyte)
  • Organization: 512K words x 16 bits
  • Supply Voltage: 2.7V - 3.6V
  • Access Time: 90 ns
  • Operating Temperature Range: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: 10 years

Detailed Pin Configuration

The MT28F800B3WP-9 T has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 46 | VCC | Power Supply (3.3V) | | 47 | GND | Ground | | 48 | WE# | Write Enable |

Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for a complete pinout diagram.

Functional Features

  • Fast random access times for efficient data retrieval
  • High endurance for reliable long-term data storage
  • Low power consumption for energy efficiency
  • Built-in error correction codes (ECC) for data integrity
  • Block erase and program operations for flexible data management

Advantages

  • High-density storage capacity
  • Non-volatile nature ensures data retention even without power
  • Fast access times for quick data retrieval
  • Low power consumption prolongs battery life in portable devices
  • Built-in error correction codes enhance data reliability

Disadvantages

  • Limited endurance compared to other memory technologies
  • Relatively higher cost per unit of storage compared to traditional hard drives
  • Susceptible to physical damage from electrostatic discharge (ESD)
  • Requires specialized programming algorithms for efficient use

Working Principles

The MT28F800B3WP-9 T utilizes NAND flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information, with the absence or presence of charge indicating 0 or 1, respectively. The memory cells are organized into blocks, which can be individually erased or programmed. When reading data, the controller applies voltages to the appropriate address lines and senses the resulting current flow to determine the stored value.

Detailed Application Field Plans

The MT28F800B3WP-9 T is commonly used in various applications, including: - Solid-state drives (SSDs) - USB flash drives - Embedded systems - Consumer electronics (e.g., digital cameras, smartphones) - Industrial automation - Automotive electronics

Detailed and Complete Alternative Models

  • MT28F800B5WG-8 B: Similar specifications, different package (TSOP)
  • MT29F8G08ABACAWP-IT: Higher capacity (8 Gigabits), similar characteristics
  • S34ML08G2: Higher capacity (8 Gigabits), different memory technology (MLC)

Note: This list is not exhaustive. There are several alternative models available from different manufacturers.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT28F800B3WP-9 T en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of MT28F800B3WP-9 T in technical solutions:

  1. Q: What is MT28F800B3WP-9 T? A: MT28F800B3WP-9 T is a specific model of flash memory chip manufactured by Micron Technology.

  2. Q: What is the capacity of MT28F800B3WP-9 T? A: The MT28F800B3WP-9 T has a capacity of 8 megabits (1 megabyte).

  3. Q: What is the operating voltage range for MT28F800B3WP-9 T? A: The operating voltage range for MT28F800B3WP-9 T is typically between 2.7V and 3.6V.

  4. Q: What is the maximum clock frequency supported by MT28F800B3WP-9 T? A: The maximum clock frequency supported by MT28F800B3WP-9 T is 90 MHz.

  5. Q: What is the access time of MT28F800B3WP-9 T? A: The access time of MT28F800B3WP-9 T is 90 ns.

  6. Q: Can MT28F800B3WP-9 T be used in automotive applications? A: Yes, MT28F800B3WP-9 T is designed to meet the requirements of automotive applications.

  7. Q: Does MT28F800B3WP-9 T support hardware data protection features? A: Yes, MT28F800B3WP-9 T supports hardware data protection features like block lock and password protection.

  8. Q: What is the endurance rating of MT28F800B3WP-9 T? A: The endurance rating of MT28F800B3WP-9 T is typically 100,000 program/erase cycles.

  9. Q: Can MT28F800B3WP-9 T operate in extended temperature ranges? A: Yes, MT28F800B3WP-9 T is designed to operate in extended temperature ranges from -40°C to +85°C.

  10. Q: What are some typical applications for MT28F800B3WP-9 T? A: MT28F800B3WP-9 T is commonly used in various applications such as automotive systems, industrial control systems, and consumer electronics.

Please note that the answers provided here are general and may vary depending on specific product specifications and requirements.