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MT29F256G08AUCABH3-10:A

MT29F256G08AUCABH3-10:A

Basic Information Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High capacity (256GB)
    • NAND Flash technology
  • Package: Integrated circuit (IC)
  • Essence: Stores and retrieves digital information in electronic devices
  • Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

  • Model: MT29F256G08AUCABH3-10:A
  • Capacity: 256GB
  • Interface: Parallel or serial
  • Voltage: 2.7V to 3.6V
  • Speed: Up to 100MHz
  • Operating Temperature: -40°C to +85°C
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F256G08AUCABH3-10:A chip has a specific pin configuration that varies depending on the interface used. Please refer to the datasheet for the detailed pinout diagram.

Functional Features

  • High-speed data transfer
  • Reliable data retention
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block management for efficient use of memory space

Advantages

  • Large storage capacity
  • Fast data transfer rates
  • Low power consumption
  • Compact form factor
  • Wide operating temperature range

Disadvantages

  • Relatively high cost compared to lower-capacity memory chips
  • Limited endurance compared to other types of memory

Working Principles

The MT29F256G08AUCABH3-10:A utilizes NAND Flash technology to store data. It consists of a grid of memory cells, where each cell can store multiple bits of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges can be read, programmed, or erased using specific voltage levels.

Detailed Application Field Plans

The MT29F256G08AUCABH3-10:A is commonly used in various electronic devices that require high-capacity data storage, such as: - Solid-state drives (SSDs) - Smartphones and tablets - Digital cameras - Industrial control systems - Automotive infotainment systems

Detailed and Complete Alternative Models

  • MT29F256G08AUCABH3-11:A
  • MT29F256G08AUCABH3-12:A
  • MT29F256G08AUCABH3-13:A
  • MT29F256G08AUCABH3-14:A

These alternative models offer similar specifications and functionality to the MT29F256G08AUCABH3-10:A, but may have slight differences in performance or features.

Note: The content provided above is a sample structure for an encyclopedia entry and does not represent actual information about the product MT29F256G08AUCABH3-10:A.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F256G08AUCABH3-10:A en soluciones técnicas

1. What is the MT29F256G08AUCABH3-10:A?

The MT29F256G08AUCABH3-10:A is a NAND flash memory device manufactured by Micron Technology. It has a capacity of 256 gigabits (32 gigabytes) and operates at a voltage of 2.7V to 3.6V.

2. What are the key features of the MT29F256G08AUCABH3-10:A?

Some key features of the MT29F256G08AUCABH3-10:A include high storage capacity, fast read and write speeds, low power consumption, and support for various data protection mechanisms like ECC (Error Correction Code).

3. What are the typical applications of the MT29F256G08AUCABH3-10:A?

The MT29F256G08AUCABH3-10:A is commonly used in various technical solutions such as solid-state drives (SSDs), embedded systems, automotive electronics, industrial control systems, and consumer electronics devices.

4. What is the interface used by the MT29F256G08AUCABH3-10:A?

The MT29F256G08AUCABH3-10:A uses a standard NAND flash interface, which is typically a parallel or serial interface depending on the specific implementation.

5. What is the maximum read and write speed of the MT29F256G08AUCABH3-10:A?

The MT29F256G08AUCABH3-10:A supports a maximum read speed of up to 50 megabytes per second and a maximum write speed of up to 20 megabytes per second.

6. Does the MT29F256G08AUCABH3-10:A support wear leveling?

Yes, the MT29F256G08AUCABH3-10:A supports wear leveling, which is a technique used to distribute write operations evenly across the memory cells to extend the lifespan of the NAND flash device.

7. What is the operating temperature range of the MT29F256G08AUCABH3-10:A?

The MT29F256G08AUCABH3-10:A has an operating temperature range of -40°C to +85°C, making it suitable for use in various environments.

8. Can the MT29F256G08AUCABH3-10:A be used as a boot device?

Yes, the MT29F256G08AUCABH3-10:A can be used as a boot device in systems that support booting from NAND flash memory.

9. Does the MT29F256G08AUCABH3-10:A have built-in error correction capabilities?

Yes, the MT29F256G08AUCABH3-10:A incorporates Error Correction Code (ECC) functionality to detect and correct errors that may occur during data read or write operations.

10. Is the MT29F256G08AUCABH3-10:A compatible with other NAND flash memory devices?

Yes, the MT29F256G08AUCABH3-10:A is compatible with other NAND flash memory devices that adhere to the same industry-standard interface and command set.