MT46V32M8BG-75:G TR

Product Overview

Category

The MT46V32M8BG-75:G TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data during operation.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Compatible with various electronic devices
• Supports high-speed data transfer rates

Package

The MT46V32M8BG-75:G TR is available in a compact and standardized package, which ensures easy integration into electronic devices. The package type may vary depending on the manufacturer's specifications.

Essence

The essence of the MT46V32M8BG-75:G TR lies in its ability to provide fast and reliable data storage and retrieval functions, contributing to the overall performance of electronic devices.

Packaging/Quantity

The product is typically packaged in reels or trays, ensuring safe transportation and handling during manufacturing processes. The quantity per package may vary based on customer requirements and manufacturer specifications.

Specifications

• Model: MT46V32M8BG-75:G TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 32 Meg x 8
• Voltage Supply: 2.5V ± 0.2V
• Speed Grade: 75
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA
• Pin Count: 60

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. BA0
43. BA1
44. RAS#
45. CAS#
46. WE#
47. CKE
48. CS#
49. DM0
50. DM1
51. VSS
52. VREF
53. CLK
54. ODT
55. VSS
56. RESET#
57. VDD
58. VDD
59. VSS
60. VSS

Functional Features

• High-speed data access and transfer capabilities
• Low power consumption
• Support for various memory operations (read, write, refresh)
• Internal data integrity checks
• Automatic self-refresh functionality
• Easy integration with different electronic devices

Advantages

• Fast data access and transfer speeds enhance overall device performance
• Large storage capacity allows for efficient data handling
• Low power consumption contributes to extended battery life in portable devices
• Compatibility with various electronic devices ensures versatility
• Automatic self-refresh functionality reduces the need for manual intervention

Disadvantages

• Volatile memory requires constant power supply, leading to data loss in case of power failure
• Relatively higher cost compared to other types of memory
• Susceptible to data corruption if not properly handled or protected

Working Principles

The MT46V32M8BG-75:G TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which need to be periodically refreshed to maintain data integrity. When a read or write operation is initiated, the memory controller sends appropriate signals to access the desired data location.

Detailed Application Field Plans

The MT46V32M8BG-75:G TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Smartphones and tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

1. MT46V32M8BG-6:G TR
2. MT46V32M8BG-5B:G TR
3. MT46V32M8BG-5B:F TR
4. MT46