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1N6658R

1N6658R

Product Overview

Category

The 1N6658R is a high-power silicon rectifier diode.

Use

It is commonly used in power supply and conversion applications.

Characteristics

  • High power handling capability
  • Low forward voltage drop
  • Fast switching speed

Package

The 1N6658R is typically available in a DO-5 package.

Packaging/Quantity

It is usually packaged individually or in reels, with quantities varying based on manufacturer specifications.

Specifications

  • Maximum Average Forward Current: 30A
  • Peak Repetitive Reverse Voltage: 200V
  • Maximum Forward Voltage Drop: 1.1V at 30A
  • Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N6658R typically has two leads, with the anode connected to the positive terminal and the cathode connected to the negative terminal.

Functional Features

The 1N6658R acts as a one-way valve for electric current, allowing it to flow in only one direction.

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Fast switching speed
  • Low forward voltage drop

Disadvantages

  • Limited reverse voltage tolerance compared to some other diode types

Working Principles

The 1N6658R operates based on the principle of semiconductor junction behavior, allowing current to flow in one direction when a forward bias is applied.

Detailed Application Field Plans

The 1N6658R is commonly used in: - Power supply units - Voltage regulation circuits - Inverter and converter systems

Detailed and Complete Alternative Models

Some alternative models to the 1N6658R include: - 1N6659R - 1N6660R - 1N6661R

In conclusion, the 1N6658R is a high-power silicon rectifier diode with excellent characteristics for power supply and conversion applications. Its fast switching speed and low forward voltage drop make it a popular choice in various electronic systems.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 1N6658R en soluciones técnicas

  1. What is 1N6658R?

    • 1N6658R is a high-reliability, military-grade silicon rectifier diode designed for rugged applications.
  2. What are the key specifications of 1N6658R?

    • The key specifications include a maximum repetitive peak reverse voltage of 200V, average forward current of 10A, and a non-repetitive peak surge current of 150A.
  3. In what technical solutions can 1N6658R be used?

    • 1N6658R can be used in power supplies, inverters, converters, and other high-reliability applications where ruggedness and high performance are required.
  4. What are the advantages of using 1N6658R in technical solutions?

    • The advantages include its high reliability, rugged construction, and ability to withstand high surge currents and temperatures.
  5. Can 1N6658R be used in harsh environmental conditions?

    • Yes, 1N6658R is designed to operate in harsh environmental conditions and is suitable for use in military, aerospace, and industrial applications.
  6. Are there any specific precautions to consider when using 1N6658R?

    • It's important to ensure proper heat dissipation and mounting to maximize the diode's performance and reliability.
  7. What is the temperature range for 1N6658R?

    • The operating temperature range for 1N6658R is typically -65°C to +175°C, making it suitable for extreme temperature environments.
  8. Is 1N6658R suitable for high-frequency applications?

    • While 1N6658R is not specifically designed for high-frequency applications, it can still be used in certain moderate frequency applications.
  9. Can 1N6658R be used in automotive electronics?

    • Yes, 1N6658R can be used in automotive electronics, especially in applications requiring high reliability and ruggedness.
  10. Where can I find detailed application notes for using 1N6658R in technical solutions?

    • Detailed application notes for 1N6658R can be found in the product datasheet provided by the manufacturer or through technical support resources.