BAT854W,115 - Product Overview

Introduction

The BAT854W,115 is a high-performance Schottky barrier diode designed for various electronic applications. This entry provides an in-depth overview of the product, including its category, use, characteristics, package details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor/Electronic Component
• Use: Rectification, Voltage Clamping, Switching
• Characteristics: High Efficiency, Low Forward Voltage Drop, Fast Switching Speed
• Package: SOD-323 (SC-76)
• Essence: Schottky Barrier Diode
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Forward Voltage Drop: 0.32V @ 1A
• Reverse Voltage: 30V
• Maximum Continuous Current: 200mA
• Operating Temperature Range: -65°C to +125°C
• Storage Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The BAT854W,115 follows the standard SOD-323 (SC-76) package configuration with two pins. The pinout is as follows: 1. Anode (A) 2. Cathode (K)

Functional Features

• High Efficiency: Due to its Schottky barrier design, the diode offers low forward voltage drop, resulting in minimal power loss.
• Fast Switching Speed: Enables rapid switching between conducting and non-conducting states, making it suitable for high-frequency applications.
• Low Thermal Resistance: Facilitates efficient heat dissipation, enhancing overall reliability.

Advantages and Disadvantages

Advantages

• Low Forward Voltage Drop: Reduces power dissipation and improves energy efficiency.
• Fast Recovery Time: Enables quick response in rectification and switching applications.
• Compact Package: SOD-323 form factor allows for space-efficient PCB layout.

Disadvantages

• Limited Reverse Voltage: Not suitable for high-voltage applications exceeding 30V.
• Sensitivity to Overcurrent: Care should be taken to avoid exceeding the maximum continuous current rating.

Working Principles

The BAT854W,115 operates based on the Schottky barrier principle, where the metal-semiconductor junction minimizes the forward voltage drop during conduction. When a forward bias is applied, the diode conducts rapidly due to the absence of minority carrier storage time, making it ideal for high-speed applications.

Detailed Application Field Plans

The BAT854W,115 finds extensive use in the following applications: - Switching Power Supplies - Voltage Clamping Circuits - Signal Demodulation - Reverse Polarity Protection - High-Frequency Rectification

Detailed and Complete Alternative Models

For applications requiring similar performance characteristics, alternative models to consider include: - BAT54 series - BAV70 - 1N5819

In conclusion, the BAT854W,115 Schottky barrier diode offers high efficiency, fast switching speed, and compact packaging, making it a versatile choice for various electronic designs.

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