NXP USA Inc.
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MRF8P20165WHSR5
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MRF8P20165WHSR5

Product Overview

  • Category: RF Power Transistor
  • Use: Amplification of radio frequency signals
  • Characteristics: High power, high frequency, low distortion
  • Package: Ceramic package
  • Essence: High-power RF transistor for industrial and commercial applications
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

  • Frequency Range: 1.8 - 2000 MHz
  • Power Output: 300 Watts
  • Gain: 16 dB
  • Efficiency: 70%
  • Voltage: 50V
  • Current: 16A
  • Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain
  • Pin 4: Ground

Functional Features

  • High power gain
  • Broadband performance
  • Excellent thermal stability
  • High efficiency

Advantages

  • High power output
  • Wide frequency range
  • Reliable performance
  • Suitable for industrial applications

Disadvantages

  • High operating voltage requirement
  • Limited availability from some suppliers

Working Principles

The MRF8P20165WHSR5 operates on the principle of amplifying radio frequency signals using a field-effect transistor (FET) configuration. When a signal is applied to the gate terminal, it modulates the conductivity between the source and drain terminals, resulting in amplification of the input signal.

Detailed Application Field Plans

This transistor is commonly used in high-power RF amplifiers for applications such as broadcast transmitters, radar systems, and industrial heating equipment. Its wide frequency range and high power output make it suitable for various communication and industrial applications.

Detailed and Complete Alternative Models

  • MRF8S9260HSR3
  • MRF7S21170HSR5
  • MRF6VP41KH

Note: The above alternative models are provided for reference and may have different specifications and characteristics.

This completes the entry for MRF8P20165WHSR5 according to the English editing encyclopedia entry structure format.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MRF8P20165WHSR5 en soluciones técnicas

  1. What is the MRF8P20165WHSR5?

    • The MRF8P20165WHSR5 is a high-power RF transistor designed for use in various technical solutions, particularly in applications requiring high-frequency amplification.

  2. What is the maximum power output of the MRF8P20165WHSR5?

    • The maximum power output of the MRF8P20165WHSR5 is typically around 165 watts, making it suitable for high-power RF applications.

  3. What frequency range does the MRF8P20165WHSR5 cover?

    • The MRF8P20165WHSR5 is designed to operate within the frequency range of 1805-1880 MHz, making it suitable for applications in the UHF band.

  4. What are the typical applications for the MRF8P20165WHSR5?

    • Typical applications for the MRF8P20165WHSR5 include cellular base station amplifiers, broadcast transmitters, and other high-power RF amplification systems.

  5. What are the key features of the MRF8P20165WHSR5 that make it suitable for technical solutions?

    • The MRF8P20165WHSR5 features high power gain, high efficiency, and excellent linearity, making it ideal for demanding RF amplification requirements.

  6. What are the recommended operating conditions for the MRF8P20165WHSR5?

    • The MRF8P20165WHSR5 operates best under specified voltage, current, and temperature conditions, which should be carefully adhered to for optimal performance.

  7. Does the MRF8P20165WHSR5 require any special cooling or heat dissipation measures?

    • Yes, due to its high-power nature, the MRF8P20165WHSR5 may require efficient heat dissipation mechanisms such as heatsinks or thermal management solutions.

  8. Are there any specific matching or impedance considerations when using the MRF8P20165WHSR5 in a technical solution?

    • Yes, proper impedance matching and careful consideration of input and output matching networks are crucial for maximizing the performance of the MRF8P20165WHSR5.

  9. What are the typical control and protection features available for the MRF8P20165WHSR5?

    • The MRF8P20165WHSR5 may include built-in protection circuits for over-voltage, over-current, and over-temperature conditions, along with control interfaces for external biasing.

  10. Where can I find detailed application notes and reference designs for integrating the MRF8P20165WHSR5 into my technical solution?

    • Detailed application notes, reference designs, and technical support for the MRF8P20165WHSR5 can be obtained from the manufacturer's official website or through authorized distributors.