NXP USA Inc.
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PHD110NQ03LT,118
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PHD110NQ03LT,118

Product Overview

Category

The PHD110NQ03LT,118 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic applications.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The PHD110NQ03LT,118 is typically available in a TO-252 (DPAK) package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 110A
  • RDS(ON) (Max) @ VGS = 10V: 1.3mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The PHD110NQ03LT,118 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced thermal performance

Advantages

  • Suitable for high-power applications
  • Efficient power dissipation
  • Reliable and robust design
  • Low on-state resistance

Disadvantages

  • Higher cost compared to standard MOSFETs
  • May require additional heat sinking in high-power applications

Working Principles

The PHD110NQ03LT,118 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Power supplies - Motor control - Inverters - DC-DC converters - Automotive systems - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to PHD110NQ03LT,118 include: - IRF3709ZPBF - FDP8878 - AUIRF3710S

In conclusion, the PHD110NQ03LT,118 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications. Its advanced features make it an ideal choice for demanding electronic designs.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de PHD110NQ03LT,118 en soluciones técnicas

Sure, here are 10 common questions and answers related to the application of PHD110NQ03LT,118 in technical solutions:

  1. What is the maximum drain-source voltage rating of PHD110NQ03LT,118?

    • The maximum drain-source voltage rating of PHD110NQ03LT,118 is 30V.

  2. What is the continuous drain current rating of PHD110NQ03LT,118?

    • The continuous drain current rating of PHD110NQ03LT,118 is 110A.

  3. Can PHD110NQ03LT,118 be used in automotive applications?

    • Yes, PHD110NQ03LT,118 is suitable for use in automotive applications.

  4. What is the typical on-resistance of PHD110NQ03LT,118?

    • The typical on-resistance of PHD110NQ03LT,118 is 3.5mΩ.

  5. Is PHD110NQ03LT,118 suitable for high-frequency switching applications?

    • Yes, PHD110NQ03LT,118 is suitable for high-frequency switching applications.

  6. Does PHD110NQ03LT,118 require a heat sink for thermal management?

    • Depending on the application and power dissipation, a heat sink may be required for thermal management.

  7. What is the gate-source voltage range for proper operation of PHD110NQ03LT,118?

    • The gate-source voltage range for proper operation of PHD110NQ03LT,118 is typically ±20V.

  8. Can PHD110NQ03LT,118 be used in power supply designs?

    • Yes, PHD110NQ03LT,118 can be used in power supply designs.

  9. What is the maximum junction temperature of PHD110NQ03LT,118?

    • The maximum junction temperature of PHD110NQ03LT,118 is 175°C.

  10. Is PHD110NQ03LT,118 RoHS compliant?

    • Yes, PHD110NQ03LT,118 is RoHS compliant, making it suitable for environmentally friendly designs.