ON Semiconductor
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
FDB047N10
Ver Detalle Hojas de datos

FDB047N10

Introduction

The FDB047N10 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the FDB047N10.

Basic Information Overview

  • Category: Power MOSFET
  • Use: The FDB047N10 is commonly used as a switching device in power supply, motor control, and other high-current applications.
  • Characteristics: It exhibits low on-state resistance, high current-carrying capability, and fast switching speed.
  • Package: The FDB047N10 is typically available in a TO-263 package.
  • Essence: It is designed to efficiently control high currents with minimal power dissipation.
  • Packaging/Quantity: The FDB047N10 is usually packaged in reels or tubes containing a specific quantity per package.

Specifications

  • Voltage Rating: 100V
  • Current Rating: 47A
  • On-State Resistance (RDS(on)): 10mΩ
  • Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 200W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FDB047N10 typically has three pins: 1. Gate (G): Input for controlling the switching operation. 2. Drain (D): Connection to the load or power source. 3. Source (S): Common reference point for the MOSFET.

Functional Features

  • Low On-State Resistance: Enables efficient current conduction with minimal voltage drop.
  • High Current-Carrying Capability: Suitable for applications requiring high current handling.
  • Fast Switching Speed: Facilitates rapid switching between on and off states.

Advantages and Disadvantages

Advantages

  • High current-handling capability
  • Low on-state resistance
  • Fast switching speed
  • Efficient power management

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal runaway under extreme conditions

Working Principles

The FDB047N10 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET enters the conducting state, allowing current to flow through it. Conversely, removing the gate voltage turns off the MOSFET, interrupting the current flow.

Detailed Application Field Plans

The FDB047N10 finds extensive use in the following applications: - Power supply units - Motor control systems - Inverter circuits - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the FDB047N10 include: - IRF540N - STP55NF06L - AUIRF3710S - IPP60R190C6

In conclusion, the FDB047N10 power MOSFET offers high current-handling capabilities, low on-state resistance, and fast switching speed, making it suitable for various power management applications.

(Word count: 443)

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de FDB047N10 en soluciones técnicas

  1. What is FDB047N10?

    • FDB047N10 is a power MOSFET transistor designed for use in various electronic applications, particularly in power management and switching circuits.

  2. What are the key specifications of FDB047N10?

    • The FDB047N10 features a voltage rating of 100V, a continuous drain current of 80A, and a low on-resistance, making it suitable for high-power applications.

  3. In what types of technical solutions can FDB047N10 be used?

    • FDB047N10 can be utilized in applications such as motor control, DC-DC converters, power supplies, and automotive systems due to its high current and voltage capabilities.

  4. How does FDB047N10 contribute to improving power management in a system?

    • FDB047N10's low on-resistance helps minimize power losses and improve efficiency in power management circuits, leading to better overall system performance.

  5. What are the thermal considerations when using FDB047N10 in a design?

    • Proper heat sinking and thermal management are crucial when using FDB047N10 to ensure that it operates within its specified temperature range and maintains reliability.

  6. Are there any application notes or reference designs available for FDB047N10?

    • Yes, manufacturers often provide application notes and reference designs to assist engineers in implementing FDB047N10 effectively in their designs.

  7. Can FDB047N10 be used in high-frequency switching applications?

    • While FDB047N10 has fast switching characteristics, it's important to consider its gate drive requirements and associated circuitry for high-frequency applications.

  8. What are the typical input and output capacitance values for FDB047N10?

    • The input capacitance (Ciss) is typically around 5200pF, and the output capacitance (Coss) is approximately 800pF, which should be considered in circuit design.

  9. Does FDB047N10 have built-in protection features?

    • FDB047N10 may include overcurrent protection and other safety features, but external circuitry or additional components may be required for comprehensive protection.

  10. Where can I find reliable simulation models for FDB047N10?

    • Simulation models for FDB047N10 can often be obtained from the manufacturer's website or through electronic component simulation software libraries.