FQD5N20LTM - Product Encyclopedia Entry

Introduction

The FQD5N20LTM is a semiconductor product belonging to the category of power MOSFETs. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The FQD5N20LTM is commonly used in power supply applications, motor control, and other high voltage switching applications.
• Characteristics: It exhibits low on-resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The FQD5N20LTM is typically available in a TO-252 package.
• Essence: Its essence lies in providing efficient power switching capabilities in various electronic circuits.
• Packaging/Quantity: It is usually packaged in reels or tubes containing a specific quantity per package.

Specifications

• Voltage Rating: 200V
• Current Rating: 5A
• On-Resistance: 0.65Ω
• Gate Charge: 15nC
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-252

Detailed Pin Configuration

The FQD5N20LTM typically has three pins: 1. Gate (G): Input for controlling the switching operation. 2. Drain (D): Connects to the load and the power supply. 3. Source (S): Connected to the ground or the common reference point.

Functional Features

• High Efficiency: Due to its low on-resistance and gate charge, it enables high efficiency in power conversion applications.
• Fast Switching Speed: The MOSFET offers fast switching characteristics, reducing switching losses.
• Low Thermal Resistance: Efficient thermal dissipation due to its package design.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion.
• Fast switching speed.
• Low on-resistance leading to reduced conduction losses.

Disadvantages

• Sensitivity to voltage spikes and overcurrent conditions.
• Gate drive circuitry complexity in some applications.

Working Principles

The FQD5N20LTM operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the drain and source terminals, allowing for efficient power switching.

Detailed Application Field Plans

The FQD5N20LTM finds extensive use in various applications, including: - Power supplies and converters - Motor control systems - Inverters and UPS (Uninterruptible Power Supplies) - Electronic ballasts - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the FQD5N20LTM include: - IRF540N - STP55NF06L - FQP50N06L

In conclusion, the FQD5N20LTM power MOSFET offers high efficiency, fast switching, and low on-resistance, making it a versatile component in power electronics applications.

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