ON Semiconductor
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MMBF5460LT1
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MMBF5460LT1

Product Overview

Category

The MMBF5460LT1 belongs to the category of field-effect transistors (FETs).

Use

It is commonly used as a small-signal amplifier or switch in electronic circuits.

Characteristics

  • Low power consumption
  • High input impedance
  • Small package size

Package

The MMBF5460LT1 is typically available in a SOT-23 package.

Essence

This FET is essential for amplifying weak signals and controlling the flow of current in electronic devices.

Packaging/Quantity

The MMBF5460LT1 is usually packaged in reels containing 3000 units.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 0.3A
  • Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBF5460LT1 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High input impedance allows for minimal loading of preceding stages.
  • Low power consumption makes it suitable for battery-operated devices.
  • Fast switching speed enables efficient signal processing.

Advantages

  • Small package size saves space on circuit boards.
  • High input impedance minimizes signal distortion.
  • Low power consumption prolongs battery life in portable devices.

Disadvantages

  • Limited maximum drain current may restrict its use in high-power applications.
  • Sensitivity to electrostatic discharge (ESD) requires careful handling during assembly.

Working Principles

The MMBF5460LT1 operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the source and drain terminals.

Detailed Application Field Plans

The MMBF5460LT1 is widely used in the following applications: - Audio amplifiers - Sensor interfaces - Battery-powered devices - Signal switching circuits

Detailed and Complete Alternative Models

Some alternative models to the MMBF5460LT1 include: - 2N7002 - BS170 - J310 - BF862

In conclusion, the MMBF5460LT1 is a versatile field-effect transistor with high input impedance and low power consumption, making it suitable for various small-signal amplification and switching applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MMBF5460LT1 en soluciones técnicas

  1. What is MMBF5460LT1?

    • MMBF5460LT1 is a JFET transistor designed for low power applications.

  2. What are the typical applications of MMBF5460LT1?

    • MMBF5460LT1 is commonly used in amplifier circuits, switching circuits, and voltage-controlled resistors.

  3. What is the maximum drain-source voltage for MMBF5460LT1?

    • The maximum drain-source voltage for MMBF5460LT1 is 40V.

  4. What is the maximum gate-source voltage for MMBF5460LT1?

    • The maximum gate-source voltage for MMBF5460LT1 is 25V.

  5. What is the maximum drain current for MMBF5460LT1?

    • The maximum drain current for MMBF5460LT1 is 50mA.

  6. What is the pin configuration of MMBF5460LT1?

    • MMBF5460LT1 has three pins: gate (G), source (S), and drain (D).

  7. What is the typical input capacitance of MMBF5460LT1?

    • The typical input capacitance of MMBF5460LT1 is 6pF.

  8. What is the typical transconductance of MMBF5460LT1?

    • The typical transconductance of MMBF5460LT1 is 12mS.

  9. What are the recommended operating conditions for MMBF5460LT1?

    • The recommended operating conditions for MMBF5460LT1 include a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C.

  10. Where can I find the detailed datasheet for MMBF5460LT1?

    • The detailed datasheet for MMBF5460LT1 can be found on the manufacturer's website or through authorized distributors.