The NGTD17T65F2WP is a power transistor belonging to the category of semiconductor devices. This product is widely used in various electronic applications due to its unique characteristics and functional features.
The NGTD17T65F2WP has the following specifications: - Maximum Voltage: 650V - Continuous Current: 17A - Power Dissipation: 150W - Operating Temperature: -55°C to 150°C - Mounting Type: Through Hole
The NGTD17T65F2WP follows the standard pin configuration for a TO-220 package: 1. Collector (C) 2. Gate (G) 3. Emitter (E)
The NGTD17T65F2WP operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device. When a voltage is applied to the gate terminal, it controls the conductivity between the collector and emitter, allowing for efficient power regulation.
The NGTD17T65F2WP finds extensive application in the following fields: - Switching power supplies - Motor control systems - Inverters and converters - Audio amplifiers - LED lighting systems
Some alternative models to the NGTD17T65F2WP include: - IRF540N - FDP8870 - STP16NF06L - MTP3055VL
In conclusion, the NGTD17T65F2WP power transistor offers high-performance characteristics suitable for a wide range of electronic applications, making it a valuable component in modern electronic designs.
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What is NGTD17T65F2WP?
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