DF36014FXV

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Collector-Emitter Voltage (Vce): 30V
• Maximum Power Dissipation (Pd): 350mW
• Transition Frequency (fT): 250MHz
• Noise Figure (NF): 2dB
• Gain-Bandwidth Product (GBW): 400MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The DF36014FXV transistor has a three-pin configuration:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): This pin controls the flow of current between the collector and emitter.
3. Emitter (E): This pin is connected to the negative terminal of the power supply.

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Wide operating temperature range for versatile applications
• Compact SMD package for space-constrained designs
• Suitable for high-frequency applications with its high transition frequency

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength - Low noise figure enhances signal quality - Wide operating temperature range allows for various environments - Small SMD package saves board space - Suitable for high-frequency applications

Disadvantages: - Limited maximum collector current may restrict certain applications - Higher power dissipation compared to some alternative models

Working Principles

The DF36014FXV is an NPN bipolar junction transistor that operates based on the principles of amplification and control of current flow. When a small signal is applied to the base pin, it controls the larger current flowing between the collector and emitter pins. This amplification allows weak signals to be boosted for further processing or transmission.

Detailed Application Field Plans

The DF36014FXV transistor finds application in various fields, including:

1. Audio Amplification: It can be used in audio amplifiers to enhance the volume and quality of sound signals.
2. Wireless Communication: The transistor's high gain and low noise characteristics make it suitable for use in wireless communication systems, such as radio frequency (RF) amplifiers.
3. Sensor Interface: It can be utilized in sensor interface circuits to amplify weak sensor signals before further processing.
4. Signal Processing: The transistor can be employed in signal processing circuits, such as filters and mixers, to amplify and manipulate signals.

Detailed and Complete Alternative Models

1. DF36014FXV - The model described in this entry.
2. DF36014FXR - Similar specifications but with a different package (Through-Hole).
3. DF36014FXS - Lower noise figure but slightly reduced gain.
4. DF36014FXT - Higher maximum collector current but lower transition frequency.

(Note: These alternative models are provided for reference purposes and may have slight variations in specifications.)

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