RPT-37PB3FN Product Overview

Introduction

The RPT-37PB3FN is a versatile electronic component that belongs to the category of phototransistors. This product is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Phototransistor
• Use: Detecting light intensity and converting it into electrical signals
• Characteristics: High sensitivity, fast response time, compact size
• Package: TO-18 package
• Essence: Light detection and signal conversion
• Packaging/Quantity: Typically available in reels or trays containing multiple units

Specifications

• Maximum Collector-Emitter Voltage: 30V
• Collector Dark Current: 100nA
• Collector-Emitter Saturation Voltage: 0.4V
• Wavelength of Peak Sensitivity: 940nm
• Operating Temperature Range: -40°C to 85°C

Detailed Pin Configuration

The RPT-37PB3FN phototransistor has three pins: 1. Emitter (E): Connected to the anode of the internal photodiode 2. Base (B): Connected to the base terminal of the internal transistor 3. Collector (C): Connected to the collector terminal of the internal transistor

Functional Features

• High sensitivity to light
• Fast response time for rapid signal processing
• Compact and easy to integrate into various electronic circuits

Advantages and Disadvantages

Advantages

• High sensitivity enables accurate light detection
• Fast response time allows for quick signal processing
• Compact size facilitates integration into small-scale electronic devices

Disadvantages

• Limited operating temperature range (-40°C to 85°C)
• Vulnerable to damage from excessive light exposure

Working Principles

The RPT-37PB3FN operates based on the principle of light-induced conductivity in semiconductors. When exposed to light, the phototransistor's internal photodiode generates electron-hole pairs, leading to a change in the transistor's conductivity and resulting in the generation of electrical signals.

Detailed Application Field Plans

The RPT-37PB3FN finds extensive use in the following application fields: - Light intensity sensing in automatic lighting systems - Optical encoding in rotary encoders - Object detection in proximity sensors - Signal transmission in fiber optic communication systems

Detailed and Complete Alternative Models

1. RPT-38PB4FN: Similar specifications with enhanced temperature range
2. RPT-39PB5FN: Higher sensitivity and broader wavelength range
3. RPT-40PB6FN: Compact SMD package for space-constrained applications

In conclusion, the RPT-37PB3FN phototransistor offers high sensitivity and fast response time, making it suitable for diverse light detection and signal conversion applications. Its compact size and functional features make it a valuable component in various electronic systems.

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