LH28F320S3NS-L11

Product Overview

Category

LH28F320S3NS-L11 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: LH28F320S3NS-L11 offers a storage capacity of 320 megabits (40 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With its high-speed interface, this flash memory device enables quick and efficient data transfer.
• Reliable performance: LH28F320S3NS-L11 ensures reliable and stable performance, making it suitable for demanding applications.
• Low power consumption: This product is designed to consume minimal power, enhancing the battery life of devices it is used in.

Package

LH28F320S3NS-L11 comes in a compact and durable package, ensuring protection during transportation and handling. The package includes the flash memory device itself along with any necessary documentation or instructions.

Essence

The essence of LH28F320S3NS-L11 lies in its ability to provide high-capacity and reliable data storage in a compact form factor, catering to the needs of modern electronic devices.

Packaging/Quantity

LH28F320S3NS-L11 is typically packaged individually, with each unit containing one flash memory device.

Specifications

• Storage Capacity: 320 megabits (40 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 50 megabits per second
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOP (Small Outline Package)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. HOLD: Suspends data transfer temporarily
4. WP: Write protection control
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• Erase and Program Operations: LH28F320S3NS-L11 supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Error Correction Code (ECC): This flash memory device incorporates ECC to ensure data integrity and reliability.
• Wear-Leveling Algorithm: LH28F320S3NS-L11 employs a wear-leveling algorithm to distribute write and erase cycles evenly across memory cells, extending the lifespan of the device.
• Security Features: This product includes security features such as password protection and data encryption to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates efficient data handling.
• Reliable performance ensures data integrity.
• Low power consumption enhances battery life.
• Security features provide data protection.

Disadvantages

• Limited storage capacity compared to higher-end flash memory devices.
• Relatively slower data transfer rate compared to some other flash memory options.

Working Principles

LH28F320S3NS-L11 utilizes the principles of NAND flash memory technology. It stores data by trapping electrons in floating gate transistors, which can be electrically programmed and erased. The stored data can be accessed by sending appropriate commands through the serial interface.

Detailed Application Field Plans

LH28F320S3NS-L11 finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. LH28F320S3NS-L12: Similar to LH28F320S3NS-L11, but with a higher storage capacity of 640 megabits (80 megabytes).
2. LH28F640S3NS-L11: Offers double the storage capacity of LH28F320S3NS-L11, with 640 megabits (80 megabytes).
3. LH28F160S3NS-L11: Provides half the storage capacity of LH28F320S3NS-L11, with 160 megabits (20 megabytes).

These alternative models offer different storage capacities to cater to varying requirements.

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