The STB47N50DM6AG is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and functional features.
The STB47N50DM6AG follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
The STB47N50DM6AG operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate voltage is applied, the device switches on, allowing current to flow between the drain and source terminals.
The STB47N50DM6AG finds extensive use in the following application fields: - Switch-mode power supplies - Motor control - Electronic ballasts - Inverters
In conclusion, the STB47N50DM6AG power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management and control applications.
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What is the maximum drain-source voltage of STB47N50DM6AG?
What is the continuous drain current rating of STB47N50DM6AG?
What is the on-state resistance (RDS(on)) of STB47N50DM6AG?
What is the gate threshold voltage of STB47N50DM6AG?
What are the typical applications for STB47N50DM6AG?
What is the operating temperature range of STB47N50DM6AG?
Does STB47N50DM6AG have built-in protection features?
What is the package type of STB47N50DM6AG?
Is STB47N50DM6AG RoHS compliant?
What are the key advantages of using STB47N50DM6AG in technical solutions?