STGB3NC120HDT4

1. Introduction

The STGB3NC120HDT4 is a power semiconductor device belonging to the category of IGBT (Insulated Gate Bipolar Transistor). This device is widely used in various applications due to its unique characteristics and performance.

2. Basic Information Overview

• Category: Power Semiconductor Device
• Use: The STGB3NC120HDT4 is used as a switching element in high-power applications such as motor drives, inverters, and power supplies.
• Characteristics: It exhibits low saturation voltage, high current capability, and fast switching speed, making it suitable for high-frequency applications.
• Package: The STGB3NC120HDT4 is available in a TO-263-3 package, which provides efficient thermal dissipation.
• Essence: Its essence lies in providing efficient power control and conversion in various electronic systems.
• Packaging/Quantity: It is typically supplied in reels with a quantity of 800 units per reel.

3. Specifications

• Voltage Rating: 1200V
• Current Rating: 40A
• Maximum Operating Temperature: 150°C
• Gate-Emitter Voltage: ±20V
• Collector-Emitter Saturation Voltage: 2.3V at 25°C, 3.0V at 150°C

4. Detailed Pin Configuration

The STGB3NC120HDT4 has a standard pin configuration with three pins: Gate (G), Collector (C), and Emitter (E).

| Pin | Description | |-----|-------------| | G | Gate | | C | Collector | | E | Emitter |

5. Functional Features

• Fast Switching Speed: Enables efficient operation in high-frequency applications.
• Low Saturation Voltage: Reduces power dissipation and improves efficiency.
• High Current Capability: Allows handling of large currents without significant voltage drop.

6. Advantages and Disadvantages

Advantages

• High Efficiency
• Fast Operation
• Low Saturation Voltage

Disadvantages

• Sensitivity to Overcurrent Conditions
• Requires Precise Gate Control

7. Working Principles

The STGB3NC120HDT4 operates based on the principles of IGBT technology, where it combines the advantages of MOSFETs and BJTs. When a sufficient gate voltage is applied, it allows a high current to flow between the collector and emitter, acting as a switch for power control.

8. Detailed Application Field Plans

The STGB3NC120HDT4 finds extensive use in: - Motor Drives - Inverters - Power Supplies - Renewable Energy Systems

9. Detailed and Complete Alternative Models

Some alternative models to the STGB3NC120HDT4 include: - STGW30NC60WD - IRG4BC30KD - FGA25N120ANTD

In conclusion, the STGB3NC120HDT4 is a versatile power semiconductor device with excellent characteristics and performance, making it an ideal choice for various high-power applications.

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