SA75AHE3/73

Product Overview

SA75AHE3/73 belongs to the category of semiconductor devices and is specifically a Schottky Barrier Rectifier. It is commonly used in power supply applications, offering characteristics such as high current capability, low forward voltage drop, and fast switching. The package type for SA75AHE3/73 is DO-204AC (DO-15), and it is available in various packaging quantities.

Specifications

• Maximum Average Forward Current: 7.5A
• Maximum Reverse Voltage: 40V
• Forward Voltage Drop: 0.55V at 3A
• Reverse Leakage Current: 0.5mA
• Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The SA75AHE3/73 has two pins, anode (A) and cathode (K), which are essential for its proper installation and functioning.

Functional Features

• High current capability
• Low forward voltage drop
• Fast switching speed
• Low reverse leakage current

Advantages and Disadvantages

Advantages

• Efficient power supply applications
• Fast switching speed
• Low forward voltage drop

Disadvantages

• Limited maximum reverse voltage
• Sensitive to temperature variations

Working Principles

SA75AHE3/73 operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to standard PN junction diodes.

Detailed Application Field Plans

SA75AHE3/73 is widely used in power supply circuits, voltage clamping, and freewheeling diode applications. Its fast switching speed and low forward voltage drop make it suitable for high-frequency applications.

Detailed and Complete Alternative Models

Some alternative models to SA75AHE3/73 include: - SB540 - SS34 - SR5100

In conclusion, SA75AHE3/73 is a Schottky Barrier Rectifier with specific characteristics and applications in power supply circuits. Its advantages include high current capability and fast switching speed, while its limitations include sensitivity to temperature variations and limited maximum reverse voltage. Understanding its specifications, pin configuration, functional features, and alternative models provides a comprehensive overview of this semiconductor device.