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2N4859JAN02
Product Overview
Category
The 2N4859JAN02 belongs to the category of semiconductor devices.
Use
It is commonly used as a high-frequency amplifier in electronic circuits.
Characteristics
- High-frequency performance
- Low noise figure
- High gain
Package
The 2N4859JAN02 is typically available in TO-92 packaging.
Essence
This product is essential for amplifying high-frequency signals with low noise interference.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Maximum Power Dissipation: 350 mW
- Collector-Base Voltage: 30 V
- Collector Current: 50 mA
- Transition Frequency: 400 MHz
- Noise Figure: 3 dB
Detailed Pin Configuration
The 2N4859JAN02 typically has three pins: 1. Base 2. Emitter 3. Collector
Functional Features
- High-frequency signal amplification
- Low noise interference
- Suitable for RF applications
Advantages
- Excellent high-frequency performance
- Low noise figure
- Versatile for RF circuit designs
Disadvantages
- Limited power dissipation capability
- Relatively low collector-base voltage rating
Working Principles
The 2N4859JAN02 operates by amplifying high-frequency signals while minimizing additional noise, making it suitable for various RF applications.
Detailed Application Field Plans
The 2N4859JAN02 is commonly used in: - Radio frequency amplifiers - Oscillator circuits - Communication systems
Detailed and Complete Alternative Models
Some alternative models to the 2N4859JAN02 include: - BF998 - BFR91A - NE46134
In conclusion, the 2N4859JAN02 is a crucial semiconductor device known for its high-frequency performance and low noise figure, making it an ideal choice for RF applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N4859JAN02 en soluciones técnicas
What is the 2N4859JAN02 transistor used for?
- The 2N4859JAN02 transistor is commonly used in high-frequency amplifier and oscillator circuits.
What are the key specifications of the 2N4859JAN02 transistor?
- The 2N4859JAN02 transistor typically has a maximum power dissipation of 350mW, a voltage breakdown of 20V, and a frequency range up to 4GHz.
Can the 2N4859JAN02 be used in RF applications?
- Yes, the 2N4859JAN02 is suitable for use in radio frequency (RF) applications due to its high-frequency capabilities.
What are the typical operating conditions for the 2N4859JAN02?
- The 2N4859JAN02 transistor operates under standard conditions with a temperature range of -55°C to +150°C and a collector current of 10mA.
Is the 2N4859JAN02 suitable for low-noise amplifier designs?
- Yes, the 2N4859JAN02 is often used in low-noise amplifier (LNA) designs due to its low noise figure and high gain characteristics.
What are the recommended biasing configurations for the 2N4859JAN02?
- Commonly used biasing configurations for the 2N4859JAN02 include fixed bias, self-bias, and voltage-divider bias.
Can the 2N4859JAN02 be used in high-frequency mixer circuits?
- Yes, the 2N4859JAN02 can be utilized in high-frequency mixer circuits due to its high-frequency performance and linearity.
Are there any specific precautions to consider when using the 2N4859JAN02 in technical solutions?
- It's important to ensure proper grounding and shielding in high-frequency applications to minimize interference and maintain signal integrity.
What are the typical package types available for the 2N4859JAN02?
- The 2N4859JAN02 is commonly available in TO-92 and surface-mount packages, providing flexibility for different circuit designs.
Where can I find detailed application notes for using the 2N4859JAN02 in technical solutions?
- Detailed application notes for the 2N4859JAN02 can be found in the manufacturer's datasheet, which provides comprehensive guidance on circuit design and implementation.