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2N5116JAN02
Product Overview
- Category: Electronic Component
- Use: Amplifier Transistor
- Characteristics: High voltage, high current capability
- Package: TO-39 metal can package
- Essence: Silicon NPN transistor
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): 600mA
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Transition Frequency: 30MHz
Detailed Pin Configuration
- Pin 1: Emitter
- Pin 2: Base
- Pin 3: Collector
Functional Features
- High voltage capability
- Low leakage current
- Fast switching speed
Advantages and Disadvantages
- Advantages:
- High voltage and current handling capacity
- Fast switching speed
- Low leakage current
- Disadvantages:
- Limited power dissipation capability
- Relatively low transition frequency
Working Principles
The 2N5116JAN02 operates as a typical NPN transistor, where the flow of current is controlled by the base terminal. When a small current is applied to the base, it allows a larger current to flow from the collector to the emitter.
Detailed Application Field Plans
This transistor is commonly used in audio amplifiers, high voltage switching circuits, and general purpose applications where high voltage and current capabilities are required.
Detailed and Complete Alternative Models
- 2N3904: Lower voltage and current ratings
- 2N2222: Similar characteristics but different package type
- BC547: Lower voltage and current ratings, different pin configuration
Note: The alternative models listed above may not be direct replacements and should be carefully evaluated for specific applications.
This comprehensive entry provides detailed information about the 2N5116JAN02, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N5116JAN02 en soluciones técnicas
What is the 2N5116JAN02 transistor used for?
- The 2N5116JAN02 is a high-frequency NPN transistor commonly used in RF and microwave applications.
What are the key specifications of the 2N5116JAN02?
- The 2N5116JAN02 has a maximum power dissipation of 300mW, a collector-base voltage of 30V, and a transition frequency of 800MHz.
Can the 2N5116JAN02 be used in amplifier circuits?
- Yes, the 2N5116JAN02 is suitable for use in amplifier circuits, particularly in high-frequency applications.
What are some typical applications of the 2N5116JAN02?
- Typical applications include RF amplifiers, oscillators, mixers, and other high-frequency signal processing circuits.
Is the 2N5116JAN02 suitable for use in low-noise amplifiers (LNAs)?
- Yes, the 2N5116JAN02 can be used in low-noise amplifier designs due to its low noise figure and high-frequency capabilities.
What is the operating temperature range of the 2N5116JAN02?
- The 2N5116JAN02 is designed to operate within a temperature range of -65°C to 200°C.
Does the 2N5116JAN02 require any special mounting considerations?
- It is recommended to use proper heat sinking and mounting techniques to ensure optimal performance and reliability.
Can the 2N5116JAN02 be used in push-pull configurations?
- Yes, the 2N5116JAN02 can be utilized in push-pull amplifier configurations for increased output power and efficiency.
What are the typical gain characteristics of the 2N5116JAN02?
- The 2N5116JAN02 exhibits high gain at RF and microwave frequencies, making it suitable for various signal amplification tasks.
Are there any common failure modes or reliability concerns with the 2N5116JAN02?
- While the 2N5116JAN02 is a reliable component, it is important to adhere to proper operating conditions and avoid exceeding its maximum ratings to prevent premature failure.