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SI1922EDH-T1-GE3
Product Overview
Category
The SI1922EDH-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive requirements
Package
The SI1922EDH-T1-GE3 is typically available in a small surface-mount package, such as the PowerPAK® SO-8.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 9.3A
- On-Resistance (RDS(ON)): 10mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 11nC
- Threshold Voltage (VGS(th)): 1-2V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI1922EDH-T1-GE3 typically has the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. N/C (Not connected)
Functional Features
- Low power dissipation
- Enhanced thermal performance
- ESD protection
- Avalanche ruggedness
Advantages
- High efficiency
- Compact design
- Suitable for high-frequency applications
- Reliable performance under varying conditions
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The SI1922EDH-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Switching power supplies - DC-DC converters - Motor control circuits - Battery management systems - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to the SI1922EDH-T1-GE3 include: - SI2302DS-T1-GE3 - SI2337DS-T1-GE3 - SI2365DS-T1-GE3 - SI2390DS-T1-GE3
In conclusion, the SI1922EDH-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI1922EDH-T1-GE3 en soluciones técnicas
Sure, here are 10 common questions and answers related to the application of SI1922EDH-T1-GE3 in technical solutions:
What is the maximum drain-source voltage (VDS) of SI1922EDH-T1-GE3?
- The maximum drain-source voltage (VDS) of SI1922EDH-T1-GE3 is 20V.
What is the continuous drain current (ID) of SI1922EDH-T1-GE3?
- The continuous drain current (ID) of SI1922EDH-T1-GE3 is 4.3A.
What is the on-resistance (RDS(on)) of SI1922EDH-T1-GE3?
- The on-resistance (RDS(on)) of SI1922EDH-T1-GE3 is typically 18mΩ at VGS = 10V.
What is the gate threshold voltage (VGS(th)) of SI1922EDH-T1-GE3?
- The gate threshold voltage (VGS(th)) of SI1922EDH-T1-GE3 is typically 1.5V.
What is the power dissipation (PD) of SI1922EDH-T1-GE3?
- The power dissipation (PD) of SI1922EDH-T1-GE3 is 2.5W.
What are the typical applications for SI1922EDH-T1-GE3?
- SI1922EDH-T1-GE3 is commonly used in load switch applications, power management, and battery protection circuits.
What is the operating temperature range for SI1922EDH-T1-GE3?
- The operating temperature range for SI1922EDH-T1-GE3 is -55°C to 150°C.
Is SI1922EDH-T1-GE3 suitable for automotive applications?
- Yes, SI1922EDH-T1-GE3 is AEC-Q101 qualified and suitable for automotive applications.
Does SI1922EDH-T1-GE3 have built-in ESD protection?
- Yes, SI1922EDH-T1-GE3 has built-in ESD protection, making it robust against electrostatic discharge events.
What package type is SI1922EDH-T1-GE3 available in?
- SI1922EDH-T1-GE3 is available in a compact and space-saving PowerPAK® SO-8 package.
I hope these answers provide the information you were looking for! If you have any more questions, feel free to ask.